Solar cells and photovoltaic devices of INP/CDS

Patent · Tue Mar 28 00:00:00 EST 1978

OSTI ID:6594442

Bachmann, K J; Buehler, E; Shay, J L; Wagner, S

Heterodiodes showing excellent potential for use in solar cells and photoelectric devices consist of junctions of p-type indium phosphide and n-type cadmium sulfide. These heterojunctions can be formed either from single crystals or from polycrystalline semiconductor material. The former type junction when incorporated in a solar cell exhibits promise for applications in space vehicles. The latter type junction as used in a solar cell has potential for large scale power generation. A chemical vapor deposition process for producing polycrystalline p-type indium phosphide films for incorporation into such a power producing device is disclosed.

• Assignee: Bell Telephone Labs., Inc.
• Patent Number(s): US 4081290
• OSTI ID: 6594442
• Resource Relation: Patent File Date: Filed date 2 Apr 1976
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
CADMIUM SULFIDE SOLAR CELLS
FABRICATION
INDIUM PHOSPHIDE SOLAR CELLS
CHEMICAL VAPOR DEPOSITION
INDIUM PHOSPHIDES
P-N JUNCTIONS
CHEMICAL COATING
DEPOSITION
DIRECT ENERGY CONVERTERS
INDIUM COMPOUNDS
JUNCTIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SURFACE COATING
140501* - Solar Energy Conversion- Photovoltaic Conversion