Metal interfaces with mercury cadmium telluride
This dissertation describes an electron-spectroscopic, ultra-high-vacuum study of Schottky barrier formation and morphology of metal overlayers on the variable-bandgap semiconductor alloy mercury cadmium telluride (MCT). Specific interfaces with various metals expected to show a wide range of behavior on MCT are investigated in detail. With these results, trends in interface behavior with respect to the properties of the overlayer metal are examined to gain insight into the factors determining interface morphology and surface Fermi-level motion for the metal/MCT interface in general. The transition metals platinum, chromium, titanium, palladium induce a negligible shift. The shift is not correlated with Hg loss from the interface. The weak mercury bond is thus seen to play a critical role in metal/MCT interface formation. The most-striking result is the strong disruption of the semiconductor surface at the metal/MCT interface to an extent not seen for semiconductors such as silicon or gallium arsenide. Results are presented briefly.
- Research Organization:
- Stanford Univ., CA (USA)
- OSTI ID:
- 6593272
- Resource Relation:
- Other Information: Thesis (Ph. D.)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
CADMIUM TELLURIDES
INTERFACES
MERCURY TELLURIDES
SEMICONDUCTOR DEVICES
LAYERS
METALS
SUBSTRATES
CADMIUM COMPOUNDS
CHALCOGENIDES
ELEMENTS
MERCURY COMPOUNDS
TELLURIDES
TELLURIUM COMPOUNDS
420800* - Engineering- Electronic Circuits & Devices- (-1989)
360603 - Materials- Properties
360104 - Metals & Alloys- Physical Properties