Organometallic vapor phase epitaxial growth of (Al/sub x/Ga/sub 1-x/)/sub 0. 5/In/sub 0. 5/P and its heterostructures

Bour, D P; Shealy, J R

doi:10.1109/3.7127

Title: Organometallic vapor phase epitaxial growth of (Al/sub x/Ga/sub 1-x/)/sub 0. 5/In/sub 0. 5/P and its heterostructures

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Abstract

The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/Ga/sub 0.5/In/sub 0.5/P heterostructures are investigated, including quantum shifts from a series of superlattices. Finally, these materials are incorporated in double heterostructure lasers and a single quantum well laser with graded-index separate confinement heterostructure.

Authors:

Bour, D P; Shealy, J R ^[1]

School of Electrical Engineering, Cornell Univ., Ithaca, NY (US)

Publication Date:: Thu Sep 01 00:00:00 EDT 1988

OSTI Identifier:: 6593225

Resource Type:: Journal Article

Journal Name:: IEEE J. Quant. Electron.; (United States)

Additional Journal Information:: Journal Volume: 24:9

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; 42 ENGINEERING; ALUMINIUM PHOSPHIDES; VAPOR PHASE EPITAXY; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM PHOSPHIDES; SEMICONDUCTOR LASERS; FABRICATION; CRYSTAL LATTICES; ORGANOMETALLIC COMPOUNDS; STRUCTURAL CHEMICAL ANALYSIS; SUPERLATTICES; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; ORGANIC COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; 360601* - Other Materials- Preparation & Manufacture; 360602 - Other Materials- Structure & Phase Studies; 420300 - Engineering- Lasers- (-1989)

Citation Formats


                    Bour, D P, and Shealy, J R. Organometallic vapor phase epitaxial growth of (Al/sub x/Ga/sub 1-x/)/sub 0. 5/In/sub 0. 5/P and its heterostructures.  United States: N. p., 1988. 
        Web.  doi:10.1109/3.7127.

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                    Bour, D P, & Shealy, J R. Organometallic vapor phase epitaxial growth of (Al/sub x/Ga/sub 1-x/)/sub 0. 5/In/sub 0. 5/P and its heterostructures.  United States.  https://doi.org/10.1109/3.7127

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                    Bour, D P, and Shealy, J R. 1988.  
        "Organometallic vapor phase epitaxial growth of (Al/sub x/Ga/sub 1-x/)/sub 0. 5/In/sub 0. 5/P and its heterostructures".  United States.  https://doi.org/10.1109/3.7127.

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@article{osti_6593225,

  title        = {Organometallic vapor phase epitaxial growth of (Al/sub x/Ga/sub 1-x/)/sub 0. 5/In/sub 0. 5/P and its heterostructures},

  author       = {Bour, D P and Shealy, J R},

  abstractNote = {The (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P material system, lattice matched to GaAs substrates, is useful for visible laser diodes. Here, low pressure organometallic vapor phase epitaxial growth of Ga/sub 0.5/In/sub 0.5/P and (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P is examined. Epitaxial layers of bulk materials are characterized using photoluminescence, electroreflectance, Raman scattering spectroscopy, and surface morphology studies to determine lattice match and optimum growth conditions. Lattice matching at the growth temperature produces featureless growth surfaces, while lattice matching at room temperatures results in minimum photoluminescence linewidth but cracked surface due to tensile strain during growth. Raman scattering spectra of the quaternary reveal a three-mode structure, with spectral peaks due to GaP-like, in P-like, and AIP-like LO phonons. Additionally, (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/Ga/sub 0.5/In/sub 0.5/P heterostructures are investigated, including quantum shifts from a series of superlattices. Finally, these materials are incorporated in double heterostructure lasers and a single quantum well laser with graded-index separate confinement heterostructure.},

  doi          = {10.1109/3.7127},

  url          = {https://www.osti.gov/biblio/6593225},
  journal      = {IEEE J. Quant. Electron.; (United States)},
number       = ,

  volume       = 24:9,

  place        = {United States},

  year         = {Thu Sep 01 00:00:00 EDT 1988},

  month        = {Thu Sep 01 00:00:00 EDT 1988}

}

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