Electroreflectance measurements of electric fields in ordered GaInP{sub 2}
- National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Ordered Ga{sub 0.52}In{sub 0.48}P alloys (GaInP{sub 2} for simplicity) grown on miscut [001] GaAs resemble monolayer superlattices with alternating Ga- and In-rich layers along either the [{bar 1}11] or [1{bar 1}1] directions. Recent calculations suggest that, in fully ordered GaInP{sub 2}, an intrinsic ordering-induced electric field of order 1600 kV/cm should exist. In partially ordered samples, as can actually be grown, the expected field is reduced to 400 kV/cm. For such a strong internal electric field, clear Franz{endash}Keldysh Oscillations (FKOs) would be expected in an electroreflectance measurement. We report electroreflectance measurements of ordered GaInP{sub 2} layers measured at T=100thinspK. For all samples measured, no FKOs are observed in the absence of an additional external dc bias voltage. At the lowest bias voltages for which FKOs are seen, the internal electric field in the GaInP{sub 2} layer, determined from the FKOs, is {approximately}60 kV/cm along the [001] direction corresponding to {approximately}100 kV/cm along the ordering direction. Hence, we conclude that, at least in the organometallic vapor phase epitaxy grown samples studied here, any net macroscopic internal electric field in the GaInP{sub 2} layer is less than {approximately}100 kV/cm along the ordering direction. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 659301
- Journal Information:
- Journal of Applied Physics, Vol. 84, Issue 8; Other Information: PBD: Oct 1998
- Country of Publication:
- United States
- Language:
- English
Similar Records
Characterization of InGaAsP/InP p-i-n solar cell structures using modulation spectroscopy and secondary ion mass spectrometry
CuPt-B ordered microstructures in GaInP and GaInAs films