New developments in double sided silicon strip detectors
- Max-Planck-Institut fuer Physik und Astrophysik, Muenchen (Germany, F.R.)
- Fakultat fur Physik der Technischen Universitat Muchen, D-8046 Garching (DE)
- Frauenhofer Institut fur Mikroelektronische Stysteme, D-4100 Duisburg (DE)
A new type of double sided silicon strip detector has been built and tested using highly density VLSI readout electronics connected to both sides. Capacitive coupling of the strips to the readout electronics has been achieved by integrating the capacitors into the detector design, which was made possible by introducing a new detector biasing concept. Schemes to simplify the technology of the fabrication of the detectors are discussed. The static performance properties of the devices as well as implications of the use of VLSI electronics in their readout are described. Prototype detectors of the described design equipped with high density readout electronics have been installed in the ALEPH detector at LEP. Test results on the performance are given.
- OSTI ID:
- 6588826
- Report Number(s):
- CONF-900143-; CODEN: IETNA; TRN: 90-031538
- Journal Information:
- IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), Vol. 37:2; Conference: Institute for Electronic and Electrical Engineers (IEEE) nuclear science symposium, San Francisco, CA (USA), 15-19 Jan 1990; ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
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