AlGaAs/GaAs lateral current injection multiquantum well (LCI-MQW) laser using impurity-induced disordering

Journal Article · Thu Dec 01 00:00:00 EST 1988 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.14375· OSTI ID:6587736

Furuya, A; Makiuchi, M; Wada, O; Fujii, T ^[1]

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1. Fujitsu Labs. Ltd., Atsugi 243-01 (JP)

A lateral current injection (LCI) multiquantum well (MQW) laser having planar structure is proposed and its advantages are discussed in comparison with conventional vertical structure lasers. A LCI-MQW laser has been fabricated by using Si- and Zn-induced disordering of an MQW active layer. It has been shown that a threshold current of 27 mA is achieved under pulsed current driven at room temperature and a very low stray capacitance of 0.27 pF has also been demonstrated at zero bias voltage.

• OSTI ID: 6587736
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. 24:12
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
LASERS
DESIGN
ALUMINIUM ARSENIDES
CAPACITANCE
FABRICATION
GALLIUM ARSENIDES
MATERIALS TESTING
ORDER-DISORDER TRANSFORMATIONS
SILICON
ZINC
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL PROPERTIES
ELEMENTS
GALLIUM COMPOUNDS
METALS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PNICTIDES
SEMIMETALS
TESTING
420300* - Engineering- Lasers- (-1989)