Time dependent electron and ion flow in pinched beam diodes. Interim report
Technical Report
·
OSTI ID:6582135
The time dependent impedance behavior of large-aspect-ratio, pinched-electron-beam diodes is studied using a computer simulation model. The results from a series of particle code simulations are used to construct a picture of the diode impedance as a function of voltage. This description is then used to compare calculated diode current with actual measured values, and good agreement is found. The code is also used to study dynamic pinch formation and ion current generation. A focusing model for the ions is presented. (Author)
- Research Organization:
- Naval Research Lab., Washington, DC (USA)
- DOE Contract Number:
- MIPR-78-523
- OSTI ID:
- 6582135
- Report Number(s):
- AD-A-056362; NRL-MR-3702
- Country of Publication:
- United States
- Language:
- English
Similar Records
Time-dependent impedance behavior of low-impedance REB diodes during self-pinching
"Ion" B-Dot and Faraday Cup Results Located Inside The Cathode Knob Of The Self Magnetic Pinch (Smp) Diode (A New Diagnostic For Diode Behavior?)
The ion induced pinch and the enhancement of ion current by pinched electron flow in relativistic diodes. Interim report
Journal Article
·
Fri Sep 01 00:00:00 EDT 1978
· J. Appl. Phys.; (United States)
·
OSTI ID:6582135
+1 more
"Ion" B-Dot and Faraday Cup Results Located Inside The Cathode Knob Of The Self Magnetic Pinch (Smp) Diode (A New Diagnostic For Diode Behavior?)
Program Document
·
Tue Aug 01 00:00:00 EDT 2017
·
OSTI ID:6582135
+2 more
The ion induced pinch and the enhancement of ion current by pinched electron flow in relativistic diodes. Interim report
Technical Report
·
Mon Sep 01 00:00:00 EDT 1975
·
OSTI ID:6582135