MBE growth, characterization, and electronic-device processing of HgCdTe, HgZnTe, related heterojunctions, and HgCdTe-CdTe superlattices. Semiannual technical report
Abstract
The author reports on growth and characterization of high-quality HgCdTe grown on CdTe, CdZnTe, CdTeSi, and GaAs substrate. A p-type layer grown on a two-inch diameter GaAs (100) substrate exhibiting an excellent uniformity in composition was also grown. Extrinsic dopants such as In, As, Sb and Li were investigated and heterojunctions were grown in situ. Incorporation of mercury in CdTe layers during the growth of HgTe-CdTe superlattices is also reported.
- Authors:
- Publication Date:
- Research Org.:
- Sunflower Army Ammunition Plant, Lawrence, KS (USA)
- OSTI Identifier:
- 6565279
- Report Number(s):
- AD-A-198421/0/XAB
- Resource Type:
- Technical Report
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 42 ENGINEERING; ELECTRONIC EQUIPMENT; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SUPERLATTICES; CADMIUM TELLURIDES; GALLIUM ARSENIDES; LAYERS; MERCURY TELLURIDES; PROCESSING; PROGRESS REPORT; SILICIDES; SUBSTRATES; ZINC COMPOUNDS; ZINC TELLURIDES; ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; DOCUMENT TYPES; EPITAXY; EQUIPMENT; GALLIUM COMPOUNDS; JUNCTIONS; MERCURY COMPOUNDS; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS; 360601* - Other Materials- Preparation & Manufacture; 420800 - Engineering- Electronic Circuits & Devices- (-1989)
Citation Formats
Faurie, J P. MBE growth, characterization, and electronic-device processing of HgCdTe, HgZnTe, related heterojunctions, and HgCdTe-CdTe superlattices. Semiannual technical report. United States: N. p., 1987.
Web.
Faurie, J P. MBE growth, characterization, and electronic-device processing of HgCdTe, HgZnTe, related heterojunctions, and HgCdTe-CdTe superlattices. Semiannual technical report. United States.
Faurie, J P. 1987.
"MBE growth, characterization, and electronic-device processing of HgCdTe, HgZnTe, related heterojunctions, and HgCdTe-CdTe superlattices. Semiannual technical report". United States.
@article{osti_6565279,
title = {MBE growth, characterization, and electronic-device processing of HgCdTe, HgZnTe, related heterojunctions, and HgCdTe-CdTe superlattices. Semiannual technical report},
author = {Faurie, J P},
abstractNote = {The author reports on growth and characterization of high-quality HgCdTe grown on CdTe, CdZnTe, CdTeSi, and GaAs substrate. A p-type layer grown on a two-inch diameter GaAs (100) substrate exhibiting an excellent uniformity in composition was also grown. Extrinsic dopants such as In, As, Sb and Li were investigated and heterojunctions were grown in situ. Incorporation of mercury in CdTe layers during the growth of HgTe-CdTe superlattices is also reported.},
doi = {},
url = {https://www.osti.gov/biblio/6565279},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 30 00:00:00 EDT 1987},
month = {Tue Jun 30 00:00:00 EDT 1987}
}
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