skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: MBE growth, characterization, and electronic-device processing of HgCdTe, HgZnTe, related heterojunctions, and HgCdTe-CdTe superlattices. Semiannual technical report

Abstract

The author reports on growth and characterization of high-quality HgCdTe grown on CdTe, CdZnTe, CdTeSi, and GaAs substrate. A p-type layer grown on a two-inch diameter GaAs (100) substrate exhibiting an excellent uniformity in composition was also grown. Extrinsic dopants such as In, As, Sb and Li were investigated and heterojunctions were grown in situ. Incorporation of mercury in CdTe layers during the growth of HgTe-CdTe superlattices is also reported.

Authors:
Publication Date:
Research Org.:
Sunflower Army Ammunition Plant, Lawrence, KS (USA)
OSTI Identifier:
6565279
Report Number(s):
AD-A-198421/0/XAB
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; ELECTRONIC EQUIPMENT; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SUPERLATTICES; CADMIUM TELLURIDES; GALLIUM ARSENIDES; LAYERS; MERCURY TELLURIDES; PROCESSING; PROGRESS REPORT; SILICIDES; SUBSTRATES; ZINC COMPOUNDS; ZINC TELLURIDES; ARSENIC COMPOUNDS; ARSENIDES; CADMIUM COMPOUNDS; CHALCOGENIDES; DOCUMENT TYPES; EPITAXY; EQUIPMENT; GALLIUM COMPOUNDS; JUNCTIONS; MERCURY COMPOUNDS; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS; 360601* - Other Materials- Preparation & Manufacture; 420800 - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats

Faurie, J P. MBE growth, characterization, and electronic-device processing of HgCdTe, HgZnTe, related heterojunctions, and HgCdTe-CdTe superlattices. Semiannual technical report. United States: N. p., 1987. Web.
Faurie, J P. MBE growth, characterization, and electronic-device processing of HgCdTe, HgZnTe, related heterojunctions, and HgCdTe-CdTe superlattices. Semiannual technical report. United States.
Faurie, J P. 1987. "MBE growth, characterization, and electronic-device processing of HgCdTe, HgZnTe, related heterojunctions, and HgCdTe-CdTe superlattices. Semiannual technical report". United States.
@article{osti_6565279,
title = {MBE growth, characterization, and electronic-device processing of HgCdTe, HgZnTe, related heterojunctions, and HgCdTe-CdTe superlattices. Semiannual technical report},
author = {Faurie, J P},
abstractNote = {The author reports on growth and characterization of high-quality HgCdTe grown on CdTe, CdZnTe, CdTeSi, and GaAs substrate. A p-type layer grown on a two-inch diameter GaAs (100) substrate exhibiting an excellent uniformity in composition was also grown. Extrinsic dopants such as In, As, Sb and Li were investigated and heterojunctions were grown in situ. Incorporation of mercury in CdTe layers during the growth of HgTe-CdTe superlattices is also reported.},
doi = {},
url = {https://www.osti.gov/biblio/6565279}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 30 00:00:00 EDT 1987},
month = {Tue Jun 30 00:00:00 EDT 1987}
}

Technical Report:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that may hold this item. Keep in mind that many technical reports are not cataloged in WorldCat.

Save / Share: