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Title: Junction silicon solar cells made with molecular beam glow discharge bombardment

Thesis/Dissertation ·
OSTI ID:6561493

The fabrication of silicon PN junction solar cells with molecular implanted emitter regions is described. A simple, economical high current (0.5 mA/cm/sup 2/), low voltage (4-6 kV) glow discharge apparatus without any ion mass separation is used for implantation. The discharge beam is characterized with a current-voltage conduction curve, radial profile of target sheet resistance and operating temperature of implant target. Molecular implantation compounds discussed include: boron trifluoride, trimethyl borate, boron trichloride, trimethyl phosphite, arsenic trifluoride, phosphorus trichloride, phosphorus oxychloride and arsenic trichloride. Annealing is accomplished with a Q-switched ruby laser and with a standard diffusion furnace. Solar cell performance parameters (conversion efficiency, quantum efficiency and junction ideality) are compared with cells conventionally implanted at 30 keV with /sup 11/B and /sup 31/P and cells made with a standard open tube phosphorus oxychloride diffusion. Cell substrate thickness was found to limit short circuit current. Total area simulated AM1 power conversion efficiencies of molecular cells without antireflection coatings or backsurface fields are at best 8.2% as compared to 9.0% for conventional implanted or diffused devices. To achieve optimum performance, laser light had to be incorporated in the molecular implant annealing procedure.

OSTI ID:
6561493
Resource Relation:
Other Information: Thesis (Ph. D.)
Country of Publication:
United States
Language:
English