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Title: The effect of junction fringing field on radiation-induced leakage current in oxide isolation structures and nonuniform damage near the channel edges in MOSFETs

Abstract

A significant contribution of fringing field effect on radiation-induced leakage current in oxide isolation structure and damage nonuniformity in MOSFET was demonstrated using analytical expressions for electrical field. A two dimensional analytical model describing electrical field distribution in oxide isolation and MOSFET structures was elaborated to provide the dynamics of positive oxide trapped charge build-up process. The leakage current at the bottom of the recessed field oxide calculation was performed using oxide trapped charge density profile obtained through charge build-up process simulated applying electrical field model to changing conditions during irradiation process. Calculations are presented for leakage current versus dose dependencies for different structure dimensions and irradiation conditions; leakage current versus voltage shift of buried layer during irradiation and P[sup +]-channel stop region doping level; and I-V characteristics of parasitic transistor. Experimental data concerning damage nonuniformity are discussed together with calculated data for electrical field pattern and nonuniformity length in MOSFETs.

Authors:
; ; ; ; ;  [1]
  1. Moscow Engineering Physics Inst., Moscow (Russian Federation). Dept. of Microelectronics
Publication Date:
OSTI Identifier:
6559270
Report Number(s):
CONF-940726-
Journal ID: ISSN 0018-9499; CODEN: IETNAE
Resource Type:
Conference
Journal Name:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
Additional Journal Information:
Journal Volume: 41:6Pt1; Conference: 31. annual international nuclear and space radiation effects conference, Tucson, AZ (United States), 18-22 Jul 1994; Journal ID: ISSN 0018-9499
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; MOSFET; PHYSICAL RADIATION EFFECTS; ANALYTICAL SOLUTION; CHARGE COLLECTION; ELECTRICAL PROPERTIES; MATHEMATICAL MODELS; TRAPPING; FIELD EFFECT TRANSISTORS; MOS TRANSISTORS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems

Citation Formats

Pershenkov, V S, Chirokov, M S, Bretchko, P T, Fastenko, P O, Baev, V K, and Belyakov, V V. The effect of junction fringing field on radiation-induced leakage current in oxide isolation structures and nonuniform damage near the channel edges in MOSFETs. United States: N. p., 1994. Web.
Pershenkov, V S, Chirokov, M S, Bretchko, P T, Fastenko, P O, Baev, V K, & Belyakov, V V. The effect of junction fringing field on radiation-induced leakage current in oxide isolation structures and nonuniform damage near the channel edges in MOSFETs. United States.
Pershenkov, V S, Chirokov, M S, Bretchko, P T, Fastenko, P O, Baev, V K, and Belyakov, V V. Thu . "The effect of junction fringing field on radiation-induced leakage current in oxide isolation structures and nonuniform damage near the channel edges in MOSFETs". United States.
@article{osti_6559270,
title = {The effect of junction fringing field on radiation-induced leakage current in oxide isolation structures and nonuniform damage near the channel edges in MOSFETs},
author = {Pershenkov, V S and Chirokov, M S and Bretchko, P T and Fastenko, P O and Baev, V K and Belyakov, V V},
abstractNote = {A significant contribution of fringing field effect on radiation-induced leakage current in oxide isolation structure and damage nonuniformity in MOSFET was demonstrated using analytical expressions for electrical field. A two dimensional analytical model describing electrical field distribution in oxide isolation and MOSFET structures was elaborated to provide the dynamics of positive oxide trapped charge build-up process. The leakage current at the bottom of the recessed field oxide calculation was performed using oxide trapped charge density profile obtained through charge build-up process simulated applying electrical field model to changing conditions during irradiation process. Calculations are presented for leakage current versus dose dependencies for different structure dimensions and irradiation conditions; leakage current versus voltage shift of buried layer during irradiation and P[sup +]-channel stop region doping level; and I-V characteristics of parasitic transistor. Experimental data concerning damage nonuniformity are discussed together with calculated data for electrical field pattern and nonuniformity length in MOSFETs.},
doi = {},
journal = {IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)},
issn = {0018-9499},
number = ,
volume = 41:6Pt1,
place = {United States},
year = {1994},
month = {12}
}

Conference:
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