Strained-layer superlattice emitter and detector structures using modulation-doped active regions

Conference · Sun Jan 01 00:00:00 EST 1984

OSTI ID:6556064

Dawson, L R; Zipperian, T E; Barnes, C E; Wiczer, J J; Osbourn, G C

Double-heterostructure p/sup +/n diodes have been fabricated from strained-layer superlattice (SLS) material in which the emitting and absorbing region consisted of alternate 120 A thick layers of GaAs and In /sub 2/Ga /sub 8/As. This region was modulation doped by a Si impurity spike in only the central 30 A of the GaAs layers. When operated as detectors (0 volts bias), these structures exhibited internal quantum efficiencies of 75%. As emitters they produced output at 1.02 ..mu..m comparable to that of commercially available 1.06 ..mu..m devices. Demonstration of efficient emitter/detector operation in modulation-doped SLS materials, in comparison to that of uniformly doped SLS structures and bulk InGaAs commercial devices, while simultaneously optimizing parallel transport properties (horizontal electron mobilities) implies that the InGaAs/GaAs SLS system is an attractive candidate for integrated optoelectronic applications.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6556064
• Report Number(s): SAND-84-1170C; CONF-8409137-1; ON: DE85000064
• Resource Relation: Conference: International symposium on GaAs and related compounds, Biarritz, France, 26 Sep 1984; Other Information: Portions are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
LIGHT EMITTING DIODES
SUPERLATTICES
PHOTODETECTORS
SEMICONDUCTOR DIODES
FABRICATION
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
QUANTUM EFFICIENCY
SILICON
STRAINS
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
440300* - Miscellaneous Instruments- (-1989)