Photoluminescence of gallium impurity in cadmium telluride
We have studied low-temperature photoluminescence in CdTe containing Ga impurity in the 1.28--1.61 eV energy region. The impurity was introduced either by implantation of bulk CdTe wafers or by doping CdTe ingots during Bridgman growth. The presence of Ga was discovered and studied in epitaxial layers of CdTe grown on GaAs substrates by pulsed laser evaporation and epitaxy. Extra features caused by the Ga presence were observed in the edge emission and in the excitonic regions. Implantation results in extended mechanical damage, and only a small fraction of the implanted Ga is optically active. Samples doped during growth by the Bridgman technique exhibit changes in the excitonic region. The photoluminescence spectra of CdTe epitaxial films grown on GaAs exhibit features which are similar to those observed in bulk CdTe with Ga impurity.
- Research Organization:
- National Research Council of Canada, Ottawa, Ontario K1A OR6, Canada
- OSTI ID:
- 6555238
- Journal Information:
- J. Vac. Sci. Technol., A; (United States), Vol. 7:2
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CADMIUM TELLURIDES
PHOTOLUMINESCENCE
GALLIUM ARSENIDES
COATINGS
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
FILMS
GALLIUM ADDITIONS
IMPURITIES
ORGANOMETALLIC COMPOUNDS
SUBSTRATES
ALLOYS
ARSENIC COMPOUNDS
ARSENIDES
CADMIUM COMPOUNDS
CHALCOGENIDES
CHEMICAL COATING
DEPOSITION
GALLIUM ALLOYS
GALLIUM COMPOUNDS
LUMINESCENCE
ORGANIC COMPOUNDS
PNICTIDES
SURFACE COATING
TELLURIDES
TELLURIUM COMPOUNDS
360104* - Metals & Alloys- Physical Properties