Determination of effective surface recombination velocity and minority-carrier lifetime in high-efficiency Si solar cells

Journal Article · Sat Jan 01 00:00:00 EST 1983 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.331693· OSTI ID:6551666

Rose, B H; Weaver, H T

A mathematical analysis for minority-carrier diffusion in a solar cell base is used to extract bulk lifetime tau and effective back-surface recombination velocity S from measurements of asymptotic decay times of short-circuit current and open-circuit voltage. Since the decay times depend individually on both S and tau, it is necessary to use both current and voltage data for unique results. Experimental measurements of current and voltage transients are presented from variable base resistivity cells, ..gamma..-irradiated cells, and cells with intentionally damaged back-surface field regions. Lifetimes determined in these experiments are compared with conventional techniques. The results show that these conventional techniques yield lifetimes in serious error for cells whose diffusion lengths approach base thickness.

• Research Organization: Sandia National Laboratories, Albuquerque, New Mexico 87185
• OSTI ID: 6551666
• Journal Information: J. Appl. Phys.; (United States), Vol. 54:1
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
CHARGE CARRIERS
DIFFUSION
DIFFUSION LENGTH
EFFICIENCY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
EXPERIMENTAL DATA
GAMMA RADIATION
LIFETIME
MATHEMATICAL MODELS
RECOMBINATION
SURFACE PROPERTIES
THICKNESS
TRANSIENTS
VELOCITY
CURRENTS
DATA
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTROMAGNETIC RADIATION
EQUIPMENT
INFORMATION
IONIZING RADIATIONS
LENGTH
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RADIATIONS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion