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Title: Thickness measurement of aluminum, titanium, titanium silicide, and tungsten silicide films by x-ray fluorescence

Journal Article · · J. Electrochem. Soc.; (United States)
DOI:https://doi.org/10.1149/1.2096222· OSTI ID:6550301
; ;  [1]
  1. Motorola, Inc., Advanced Products Research and Development Lab., Austin, TX (US)

X-ray fluorescence (XRF) has received a great deal of attention in the last few years as a quantitative means of determining both the stoichiometry and thickness of many different kinds of films. Examples include Ag and Cu films on mica substrates, Sn-Pb alloys on steel substrates, Al-Ti multilayers on Cu substrates and oxide films on silicon substrates. In XRF the sample is irradiated with x-rays which in turn cause x-rays to be given off by the sample. These x-rays that are given off by the sample can then be analyzed both for energy and intensity. The energy of the x-rays is characteristic of the elemental makeup of the sample and the intensity of the x-rays is dependent on how much of the particular element is present. The intensity then can be related to the thickness of a film if the stoichiometry of the film can be assumed constant. With the increased interest in silicides and more recently, the self-aligned silicide (salicide) process (8-10) for VLSI applications, in-line process monitoring of silicide film thickness has become important to integrated circuit manufacturing. In this study, the number of x-ray photons given of by Al, Ti, titanium silicide, and tungsten silicide films on silicon-based substrates was quantified so that a film thickness for an unknown sample could then be determined easily. In addition, XRF is a more accurate technique, limited principally by the accuracy technique, limited principally by the accuracy of the reference used and the amount of time the x-ray photons are counted.

OSTI ID:
6550301
Journal Information:
J. Electrochem. Soc.; (United States), Vol. 135:8
Country of Publication:
United States
Language:
English