On the mechanism of growth of CdTe by organometallic vapor-phase epitaxy
In this paper are presented some experimental results to explain mechanisms involved in the growth of CdTe by organometallic vapor-phase epitaxy (OMVPE). A pyrolysis study of dimethylcadmium (DMCd) was conducted in an OMVPE reactor, in the temperature range 230/sup 0/-400/sup 0/C. It was found that dimethylcadmium decomposes above approximately 230/sup 0/C and the reaction is heterogeneous from 230/sup 0/ to 370/sup 0/C. CdTe growth was also studied over a range of temperature from 300/sup 0/ to 375/sup 0/C and for various reactor parameters. In all cases, the CdTe deposition rate was found to be closely related to the decomposition of dimethylcadmium. A model is presented to explain the CdTe growth at low temperatures where diethyltelluride is very stable. The growth of CdTe, using diethyltelluride and elemental cadmium, was demonstrated and supports the model. The growth rate of CdTe was studied as a function of the partial pressure of DMCd and DETe, and the results were explained in light of this growth model.
- Research Organization:
- Dept. of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590
- OSTI ID:
- 6545178
- Journal Information:
- J. Electrochem. Soc.; (United States), Vol. 134:1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CADMIUM TELLURIDES
CRYSTAL GROWTH
VAPOR PHASE EPITAXY
CADMIUM
CADMIUM COMPOUNDS
CHEMICAL REACTION KINETICS
CHEMICAL REACTORS
EXPERIMENTAL DATA
HIGH TEMPERATURE
ORGANOMETALLIC COMPOUNDS
PARTIAL PRESSURE
PYROLYSIS
CHALCOGENIDES
CHEMICAL REACTIONS
DATA
DECOMPOSITION
ELEMENTS
EPITAXY
INFORMATION
KINETICS
METALS
NUMERICAL DATA
ORGANIC COMPOUNDS
REACTION KINETICS
TELLURIDES
TELLURIUM COMPOUNDS
THERMOCHEMICAL PROCESSES
360602* - Other Materials- Structure & Phase Studies