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Title: Process for preparing a densified beta-phase silicon nitride material having at least one densification aid, and the material resulting therefrom

Abstract

A process is described for preparing an alpha-phase silicon nitride material and thereafter sintering to a densified beta-phase silicon nitride material, comprising: (a) comminuting a slurry including a mixture of (i) silicon-containing powder, (ii) water, and (iii) at least one densification aid to aid in later densifying of the silicon nitride material, said comminuting being performed to form fresh, non-oxidized surfaces on the silicon powder and to allow substantial chemical reaction between the silicon and the water, said comminuting being performed to form fresh, non-oxidized surfaces on the silicon powder and to allow substantial chemical reaction between the silicon and the water, yielding a mass; (b) nitriding the mass by exposure to a sufficient amount of a nitriding gas including at least nitrogen at a sufficient temperature for a sufficient length of time to form a mass of substantially alpha-phase silicon nitride; and (c) sintering the resultant silicon nitride mass at a sintering holding temperature of from about 1,450 C to about 2,100 C for a sufficient length of time to convert the silicon nitride from a predominantly alpha-phase material to a predominantly densified beta phase silicon nitride material exhibiting a decrease in bulk volume of the silicon nitride duemore » to the densification.« less

Inventors:
;
Publication Date:
OSTI Identifier:
6543203
Patent Number(s):
US 5213729; A
Application Number:
PPN: US 7-557371
Assignee:
Eaton Corporation, Cleveland, OH (United States)
Resource Type:
Patent
Resource Relation:
Patent File Date: 24 Jul 1990
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON NITRIDES; COMMINUTION; SINTERING; DENSITY; MICROSTRUCTURE; NITRIDATION; NITROGEN; POWDERS; SLURRIES; TEMPERATURE RANGE 1000-4000 K; CHEMICAL REACTIONS; CRYSTAL STRUCTURE; DISPERSIONS; ELEMENTS; FABRICATION; MIXTURES; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PHYSICAL PROPERTIES; PNICTIDES; SILICON COMPOUNDS; SUSPENSIONS; TEMPERATURE RANGE; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication

Citation Formats

Edler, J P, and Lisowsky, B. Process for preparing a densified beta-phase silicon nitride material having at least one densification aid, and the material resulting therefrom. United States: N. p., 1993. Web.
Edler, J P, & Lisowsky, B. Process for preparing a densified beta-phase silicon nitride material having at least one densification aid, and the material resulting therefrom. United States.
Edler, J P, and Lisowsky, B. Tue . "Process for preparing a densified beta-phase silicon nitride material having at least one densification aid, and the material resulting therefrom". United States.
@article{osti_6543203,
title = {Process for preparing a densified beta-phase silicon nitride material having at least one densification aid, and the material resulting therefrom},
author = {Edler, J P and Lisowsky, B},
abstractNote = {A process is described for preparing an alpha-phase silicon nitride material and thereafter sintering to a densified beta-phase silicon nitride material, comprising: (a) comminuting a slurry including a mixture of (i) silicon-containing powder, (ii) water, and (iii) at least one densification aid to aid in later densifying of the silicon nitride material, said comminuting being performed to form fresh, non-oxidized surfaces on the silicon powder and to allow substantial chemical reaction between the silicon and the water, said comminuting being performed to form fresh, non-oxidized surfaces on the silicon powder and to allow substantial chemical reaction between the silicon and the water, yielding a mass; (b) nitriding the mass by exposure to a sufficient amount of a nitriding gas including at least nitrogen at a sufficient temperature for a sufficient length of time to form a mass of substantially alpha-phase silicon nitride; and (c) sintering the resultant silicon nitride mass at a sintering holding temperature of from about 1,450 C to about 2,100 C for a sufficient length of time to convert the silicon nitride from a predominantly alpha-phase material to a predominantly densified beta phase silicon nitride material exhibiting a decrease in bulk volume of the silicon nitride due to the densification.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {5}
}