Highly stable strained layer leaky-mode diode laser arrays
- New Mexico Univ., Albuquerque, NM (USA). Center for High Technology Materials
- Sandia National Labs., Albuquerque, NM (USA)
A simple new fabrication process for InGaAs strained quantum well leaky-mode laser arrays is demonstrated. The arrays are ten-element devices grown by two-step metal-organic chemical vapor deposition. The structure consists of a strained quantum well InGaAs graded index-separate confinement active region and a thin (0.12 {mu}m), transparent GaAs waveguide region. The near-field pattern typical of leaky-mode phase-locked arrays is measured. Fundamental mode oscillation is observed up to 2 A (threshold is as low as 174 mA). A 1 {mu}s pulsed optical output power of 172 mW per facet and far-field angle (FWHM) of 1.6 times the diffraction limit is observed at 1 A. This is the first reported operation of a strained quantum well leaky-mode laser utilizing a built-in index step.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6542865
- Journal Information:
- IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Vol. 2:8; ISSN 1041-1135
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
47 OTHER INSTRUMENTATION
SEMICONDUCTOR LASERS
QUANTUM EFFICIENCY
DIFFRACTION GRATINGS
FABRICATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
MODE SELECTION
SEMICONDUCTOR DIODES
WAVEGUIDES
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
GALLIUM COMPOUNDS
GRATINGS
INDIUM COMPOUNDS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)
657002 - Theoretical & Mathematical Physics- Classical & Quantum Mechanics
440600 - Optical Instrumentation- (1990-)