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Title: Gaas on gasb mechanically stacked photovoltaic cells, package assembly, and modules

Patent ·
OSTI ID:6537330

This patent describes an apparatus comprising mechanically stacked photovoltaic cells, comprising: (a) a bottom photovoltaic cell comprising: (a1) a conductive substrate, (a2) a layer of GaSb having regions of different conductivity forming a homojunction therein and contacting the conductive substrate, (a3) a bottom cell passivating layer contacting the surface of the layer of GaSb opposite to the surface of the GaSb layer contacting the substrate, and (a4) means for forming electrical contacts to the substrate and the incident surface of the bottom cell passivating layer and (b) a top photovoltaic cell comprising: (b1) a layer of GaAs having regions of different conductivity forming a homojunction therein, (b2) a top cell passivating layer contacting the surface of the layer of GaAs which is incident to solar radiation, and (b3) means for forming electrical contacts to the layer of GaAs opposed to solar radiation and the incident surface of the top cell passivating layer; wherein the means for forming electrical contacts in the bottom cell and the means for forming electrical contacts in the top cell are aligned.

Assignee:
Chevron Research Co., San Francisco, CA
Patent Number(s):
US 776893
OSTI ID:
6537330
Resource Relation:
Patent File Date: Filed date 21 Oct 1986
Country of Publication:
United States
Language:
English