High-power temperature-insensitive gain-offset InGaAs/GaAs vertical-cavity surface-emitting lasers

Journal Article · Mon Feb 01 00:00:00 EST 1993 · IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/68.195980· OSTI ID:6536547

Young, D B; Scott, J W; Peters, F H; Thibeault, B J; Corzine, S W; Peters, M G; Lee, S L; Coldren, L A ^[1]

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1. Univ. of California, Santa Barbara (United States)

The authors have grown 997 nm vertical-cavity surface-emitting lasers with an offset between the wavelength of the cavity mode and the quantum well gain peak to improve high temperature operation, and with higher aluminum-content barriers around the active region to improve the carrier confinement. They fabricated lasers of 8-15 and 20 [mu]m diameters. The 8[mu]m diameter devices exhibited CW operation up to 140 C with little change in threshold current from 15 C, and the 20[mu]m diameter devices showed CW output power of 11 mW at 25 C without significant heat-sinking.

• OSTI ID: 6536547
• Journal Information: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States), Vol. 5:2; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
DESIGN
FABRICATION
GAIN
GALLIUM ARSENIDES
HEAT SINKS
INDIUM ARSENIDES
LASER CAVITIES
LASER MATERIALS
OPERATION
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LASERS
MATERIALS
PNICTIDES
SEMICONDUCTOR DEVICES
SINKS
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)