skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: High-power temperature-insensitive gain-offset InGaAs/GaAs vertical-cavity surface-emitting lasers

Abstract

The authors have grown 997 nm vertical-cavity surface-emitting lasers with an offset between the wavelength of the cavity mode and the quantum well gain peak to improve high temperature operation, and with higher aluminum-content barriers around the active region to improve the carrier confinement. They fabricated lasers of 8-15 and 20 [mu]m diameters. The 8[mu]m diameter devices exhibited CW operation up to 140 C with little change in threshold current from 15 C, and the 20[mu]m diameter devices showed CW output power of 11 mW at 25 C without significant heat-sinking.

Authors:
; ; ; ; ; ; ;  [1]
  1. Univ. of California, Santa Barbara (United States)
Publication Date:
OSTI Identifier:
6536547
Resource Type:
Journal Article
Journal Name:
IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)
Additional Journal Information:
Journal Volume: 5:2; Journal ID: ISSN 1041-1135
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; DESIGN; FABRICATION; GAIN; GALLIUM ARSENIDES; HEAT SINKS; INDIUM ARSENIDES; LASER CAVITIES; LASER MATERIALS; OPERATION; AMPLIFICATION; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; MATERIALS; PNICTIDES; SEMICONDUCTOR DEVICES; SINKS; SOLID STATE LASERS; 426002* - Engineering- Lasers & Masers- (1990-)

Citation Formats

Young, D B, Scott, J W, Peters, F H, Thibeault, B J, Corzine, S W, Peters, M G, Lee, S L, and Coldren, L A. High-power temperature-insensitive gain-offset InGaAs/GaAs vertical-cavity surface-emitting lasers. United States: N. p., 1993. Web. doi:10.1109/68.195980.
Young, D B, Scott, J W, Peters, F H, Thibeault, B J, Corzine, S W, Peters, M G, Lee, S L, & Coldren, L A. High-power temperature-insensitive gain-offset InGaAs/GaAs vertical-cavity surface-emitting lasers. United States. doi:10.1109/68.195980.
Young, D B, Scott, J W, Peters, F H, Thibeault, B J, Corzine, S W, Peters, M G, Lee, S L, and Coldren, L A. Mon . "High-power temperature-insensitive gain-offset InGaAs/GaAs vertical-cavity surface-emitting lasers". United States. doi:10.1109/68.195980.
@article{osti_6536547,
title = {High-power temperature-insensitive gain-offset InGaAs/GaAs vertical-cavity surface-emitting lasers},
author = {Young, D B and Scott, J W and Peters, F H and Thibeault, B J and Corzine, S W and Peters, M G and Lee, S L and Coldren, L A},
abstractNote = {The authors have grown 997 nm vertical-cavity surface-emitting lasers with an offset between the wavelength of the cavity mode and the quantum well gain peak to improve high temperature operation, and with higher aluminum-content barriers around the active region to improve the carrier confinement. They fabricated lasers of 8-15 and 20 [mu]m diameters. The 8[mu]m diameter devices exhibited CW operation up to 140 C with little change in threshold current from 15 C, and the 20[mu]m diameter devices showed CW output power of 11 mW at 25 C without significant heat-sinking.},
doi = {10.1109/68.195980},
journal = {IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (United States)},
issn = {1041-1135},
number = ,
volume = 5:2,
place = {United States},
year = {1993},
month = {2}
}