skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Epitaxial relations between in situ superconducting YBa sub 2 Cu sub 3 O sub 7 minus x thin films and BaTiO sub 3 /MgAl sub 2 O sub 4 /Si substrates

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.346607· OSTI ID:6534585
; ; ; ; ; ; ; ; ;  [1]; ; ; ;  [2]
  1. Bellcore, Red Bank, New Jersey 07701-7040 (USA)
  2. NEC Corporation, 4-1-1 Miyazaki, Kawasaki, Kanagawa 213 (Japan)

{ital In} {ital situ} superconducting YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} films with {ital T}{sub {ital c}0} up to 87 K and {ital J}{sub {ital c}, 77 K} up to 6{times}10{sup 4} A/cm{sup 2} were prepared on Si substrates with MgAl{sub 2}O{sub 4} and BaTiO{sub 3} double-buffer layers. The epitaxial relations between various layers were established by transmission electron microscopy. The MgAl{sub 2}O{sub 4} layer is heavily faulted. The subsequent BaTiO{sub 3} layer stops most of the faults, provides a template for the YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} growth, and partially screens off the stress due to different thermal expansion coefficients. The microstructure of the YBa{sub 2}Cu{sub 3}O{sub 7{minus}{ital x}} layer is very similar to that of the films deposited directly on SrTiO{sub 3}, exhibiting a homogeneous heavily faulted single-crystal-like structure free from secondary phases and grain boundaries. The slight degradation of the transport properties is attributed to residual thermal stress.

OSTI ID:
6534585
Journal Information:
Journal of Applied Physics; (USA), Vol. 68:4; ISSN 0021-8979
Country of Publication:
United States
Language:
English