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Title: Amorphous hydrogenated silicon films for solar cell application obtained with 55 kHz plasma enhanced chemical vapor deposition

Abstract

In this work, a-Si:H films with good electronic properties in spite of an inhomogeneous structure were prepared by the 55 kHz plasma enhanced chemical vapor high-rate deposition technique. The structural analysis using infrared spectroscopy and atomic force microscopy has shown that these films possess two dominant types of microstructural inhomogeneities, which differ by size. To analyze the influence of a 55 kHz plasma on the properties of intrinsic a-Si:H film, the density of states in the a-Si:H mobility gap was estimated by modeling of the temperature dependence of the photoconductivity and from electron paramagnetic resonance measurements. Investigated capacitance-voltage characteristics showed that a-Si:H/c-Si heterostructures have low interface density of states and can be considered as an ideal abrupt heterojunction.

Authors:
; ; ; ;  [1]; ;  [2];  [3]
  1. Moscow Inst. of Electronic Technology (Russian Federation)
  2. Russian Academy of Sciences, Yaroslavl (Russian Federation). Inst. of Microelectronics
  3. Delft Univ. of Technology (Netherlands). Faculty of Information Technology and Systems
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
653391
Resource Type:
Journal Article
Journal Name:
Journal of the Electrochemical Society
Additional Journal Information:
Journal Volume: 145; Journal Issue: 7; Other Information: PBD: Jul 1998
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON SOLAR CELLS; SILICON; CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; PHOTOCONDUCTIVITY; CAPACITANCE; HETEROJUNCTIONS

Citation Formats

Budaguan, B G, Sherchenkov, A A, Stryahilev, D A, Sazonov, A Y, Radosel`sky, A G, Chernomordic, V D, Popov, A A, and Metselaar, J W. Amorphous hydrogenated silicon films for solar cell application obtained with 55 kHz plasma enhanced chemical vapor deposition. United States: N. p., 1998. Web. doi:10.1149/1.1838669.
Budaguan, B G, Sherchenkov, A A, Stryahilev, D A, Sazonov, A Y, Radosel`sky, A G, Chernomordic, V D, Popov, A A, & Metselaar, J W. Amorphous hydrogenated silicon films for solar cell application obtained with 55 kHz plasma enhanced chemical vapor deposition. United States. https://doi.org/10.1149/1.1838669
Budaguan, B G, Sherchenkov, A A, Stryahilev, D A, Sazonov, A Y, Radosel`sky, A G, Chernomordic, V D, Popov, A A, and Metselaar, J W. 1998. "Amorphous hydrogenated silicon films for solar cell application obtained with 55 kHz plasma enhanced chemical vapor deposition". United States. https://doi.org/10.1149/1.1838669.
@article{osti_653391,
title = {Amorphous hydrogenated silicon films for solar cell application obtained with 55 kHz plasma enhanced chemical vapor deposition},
author = {Budaguan, B G and Sherchenkov, A A and Stryahilev, D A and Sazonov, A Y and Radosel`sky, A G and Chernomordic, V D and Popov, A A and Metselaar, J W},
abstractNote = {In this work, a-Si:H films with good electronic properties in spite of an inhomogeneous structure were prepared by the 55 kHz plasma enhanced chemical vapor high-rate deposition technique. The structural analysis using infrared spectroscopy and atomic force microscopy has shown that these films possess two dominant types of microstructural inhomogeneities, which differ by size. To analyze the influence of a 55 kHz plasma on the properties of intrinsic a-Si:H film, the density of states in the a-Si:H mobility gap was estimated by modeling of the temperature dependence of the photoconductivity and from electron paramagnetic resonance measurements. Investigated capacitance-voltage characteristics showed that a-Si:H/c-Si heterostructures have low interface density of states and can be considered as an ideal abrupt heterojunction.},
doi = {10.1149/1.1838669},
url = {https://www.osti.gov/biblio/653391}, journal = {Journal of the Electrochemical Society},
number = 7,
volume = 145,
place = {United States},
year = {Wed Jul 01 00:00:00 EDT 1998},
month = {Wed Jul 01 00:00:00 EDT 1998}
}