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Title: Studies of single-mode injection lasers and of quaternary materials. Volume 2: Measurement of electro-optic effects in InGaAsP junction waveguides. Final report, 4 Feb. 1980 - 15 May 1981

Abstract

Both the linear electro-optic (Pockel's) effect and electroabsorption (Franz-Keldysh effect) in waveguiding junctions of InGaAsP were measured. The electro-optic coefficient is found to be 0.1-0.14x10 to the -12 power m/V at lambda 1.54 - 1.65 micrometers. Possibly this is the first reported measurement of the electro-optic coefficient for InGaAsP. The value found for the electroabsorption is on the order of 7x10 to the -4 power cm to the -1 power/(V/cm) or approximately 100 cm/1 for fields of 200,000 V/cm at lambda 1.3 micrometers. All measurements were made on a quaternary film with a bandgap wavelength of 1.23 micrometers. Because of the rapid commercial introduction of quaternary lasers, LEDs, and detectors to take advantage of large optical fiber bandwidths and low losses in the 1.2- to 1.7- micrometer region, these measurements are significant in providing some of the basic physical constants needed to design modulators and switches capable of operating at microwave frequencies in this wavelength region.

Authors:
Publication Date:
Research Org.:
RCA Labs., Princeton, NJ (USA)
OSTI Identifier:
6523091
Report Number(s):
NASA-CR-3521
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; ELECTRO-OPTICAL EFFECTS; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; WAVEGUIDES; ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; 420300* - Engineering- Lasers- (-1989)

Citation Formats

Hammer, J M. Studies of single-mode injection lasers and of quaternary materials. Volume 2: Measurement of electro-optic effects in InGaAsP junction waveguides. Final report, 4 Feb. 1980 - 15 May 1981. United States: N. p., 1982. Web.
Hammer, J M. Studies of single-mode injection lasers and of quaternary materials. Volume 2: Measurement of electro-optic effects in InGaAsP junction waveguides. Final report, 4 Feb. 1980 - 15 May 1981. United States.
Hammer, J M. 1982. "Studies of single-mode injection lasers and of quaternary materials. Volume 2: Measurement of electro-optic effects in InGaAsP junction waveguides. Final report, 4 Feb. 1980 - 15 May 1981". United States.
@article{osti_6523091,
title = {Studies of single-mode injection lasers and of quaternary materials. Volume 2: Measurement of electro-optic effects in InGaAsP junction waveguides. Final report, 4 Feb. 1980 - 15 May 1981},
author = {Hammer, J M},
abstractNote = {Both the linear electro-optic (Pockel's) effect and electroabsorption (Franz-Keldysh effect) in waveguiding junctions of InGaAsP were measured. The electro-optic coefficient is found to be 0.1-0.14x10 to the -12 power m/V at lambda 1.54 - 1.65 micrometers. Possibly this is the first reported measurement of the electro-optic coefficient for InGaAsP. The value found for the electroabsorption is on the order of 7x10 to the -4 power cm to the -1 power/(V/cm) or approximately 100 cm/1 for fields of 200,000 V/cm at lambda 1.3 micrometers. All measurements were made on a quaternary film with a bandgap wavelength of 1.23 micrometers. Because of the rapid commercial introduction of quaternary lasers, LEDs, and detectors to take advantage of large optical fiber bandwidths and low losses in the 1.2- to 1.7- micrometer region, these measurements are significant in providing some of the basic physical constants needed to design modulators and switches capable of operating at microwave frequencies in this wavelength region.},
doi = {},
url = {https://www.osti.gov/biblio/6523091}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {4}
}

Technical Report:
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