Growth of untwinned Bi sub 2 Sr sub 2 Ca sub 2 Cu sub 3 O sub x thin films by atomically layered epitaxy
- Varian Research Center, Palo Alto, CA (USA)
- Department of Electrical Engineering, Stanford University, Stanford, CA (USA)
We report the growth of untwinned epitaxial thin films of Bi-Sr-Ca-Cu-O by atomically layered heteroepitaxy on SrTiO{sub 3} substrates. These films are {ital c}-axis oriented as-layered and do not exhibit 90{degree} in-plane defects, i.e., {ital a}-{ital b} twinning.'' By misorienting the surface normal from {l brace}100{r brace} by approximately 4{degree} towards {l angle}111{r angle}, the cubic symmetry of the {l brace}100{r brace} surface is adequately broken to completely align the {ital b} axis of the superconducting film with respect to the substrate. Reflection high-energy electron diffraction patterns observed during growth and post-growth x-ray diffraction analysis indicate that the incommensurate structural modulation occurs along the same direction as the step edges.
- OSTI ID:
- 6522037
- Journal Information:
- Applied Physics Letters; (USA), Vol. 57:10; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
BISMUTH OXIDES
VAPOR PHASE EPITAXY
CALCIUM OXIDES
COPPER OXIDES
STRONTIUM OXIDES
ELECTRON DIFFRACTION
SUPERCONDUCTING FILMS
SUPERCONDUCTIVITY
ALKALINE EARTH METAL COMPOUNDS
BISMUTH COMPOUNDS
CALCIUM COMPOUNDS
CHALCOGENIDES
COHERENT SCATTERING
COPPER COMPOUNDS
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EPITAXY
FILMS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SCATTERING
STRONTIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
360202* - Ceramics
Cermets
& Refractories- Structure & Phase Studies