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Title: Laser processing for high-efficiency silicon solar cells

Abstract

The experimental and theoretical aspects of the physics of pulsed laser annealing are reviewed with attention to the application of laser processing to solar cell fabrication. The approaches to junction formation discussed include ion implantation followed by laser annealing, laser-induced diffusion of surface-deposited dopants, laser recrystallization of doped amorphous films, and laser annealing after dopant implantation by glow and corona discharge. Cells made from 15 ohm-cm base material with junctions formed by ion-implantation and laser annealing or by laser-induced diffusion of surface-deposited dopants give 15% AM1 efficiencies without back surface fields or front surface passivation. Radiation from Q-switched lasers can also be used to clean up the emitter region in cells made by conventional thermal diffusion and to control grain boundary diffusion in polycrystalline materials.

Authors:
;
Publication Date:
Research Org.:
Oak Ridge National Lab., Oak Ridge, TN
OSTI Identifier:
6506747
Report Number(s):
CONF-800106-
Journal ID: CODEN: CRCND
DOE Contract Number:  
W-7405-ENG-26
Resource Type:
Conference
Journal Name:
Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
Additional Journal Information:
Conference: 14. photovoltaics specialists conference, San Diego, CA, USA, 7 Jan 1980
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON SOLAR CELLS; FABRICATION; HEATING; ANNEALING; CRYSTAL DOPING; EFFICIENCY; GRAIN BOUNDARIES; ION IMPLANTATION; LASER RADIATION; Q-SWITCHING; RECRYSTALLIZATION; SEMICONDUCTOR JUNCTIONS; SURFACE COATING; THERMAL DIFFUSION; CRYSTAL STRUCTURE; DEPOSITION; DIFFUSION; DIRECT ENERGY CONVERTERS; ELECTROMAGNETIC RADIATION; EQUIPMENT; HEAT TREATMENTS; JUNCTIONS; MICROSTRUCTURE; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; RADIATIONS; SOLAR CELLS; SOLAR EQUIPMENT; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Wood, R F, and Young, R T. Laser processing for high-efficiency silicon solar cells. United States: N. p., 1980. Web.
Wood, R F, & Young, R T. Laser processing for high-efficiency silicon solar cells. United States.
Wood, R F, and Young, R T. 1980. "Laser processing for high-efficiency silicon solar cells". United States.
@article{osti_6506747,
title = {Laser processing for high-efficiency silicon solar cells},
author = {Wood, R F and Young, R T},
abstractNote = {The experimental and theoretical aspects of the physics of pulsed laser annealing are reviewed with attention to the application of laser processing to solar cell fabrication. The approaches to junction formation discussed include ion implantation followed by laser annealing, laser-induced diffusion of surface-deposited dopants, laser recrystallization of doped amorphous films, and laser annealing after dopant implantation by glow and corona discharge. Cells made from 15 ohm-cm base material with junctions formed by ion-implantation and laser annealing or by laser-induced diffusion of surface-deposited dopants give 15% AM1 efficiencies without back surface fields or front surface passivation. Radiation from Q-switched lasers can also be used to clean up the emitter region in cells made by conventional thermal diffusion and to control grain boundary diffusion in polycrystalline materials.},
doi = {},
url = {https://www.osti.gov/biblio/6506747}, journal = {Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {1}
}

Conference:
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