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Title: Static characteristics of 1. 5-1. 6. mu. m GaInAsP/InP buried heterostructure butt-jointed built-in integrated lasers

Abstract

Lasing characteristics of GaInAsP/InP buried heterostructure butt-jointed built-in distributed Bragg reflector integrated lasers (BH-BJB-DBR lasers) intended for dynamic single mode operation in the wavelength range of 1.5-1.6 ..mu..m are given. In the first section, the coupling property between the active region and the butt-jointed external waveguide region is calculated to show the possibility of large fabrication tolerance. A coupling coefficient of more than 95 percent is estimated. Secondly, the GaInAsP/InP integrated lasers were fabricated and tested in the view of the static characteristics and the axial mode selection property. Lateral mode control was achieved by the use of a buried heterostructure, so that the axial and lateral modes were maintained to a fixed single mode. The lasers thus fabricated were operated in CW conditions at room temperature with a threshold current of about 100 mA. Single longitudinal mode operation was observed with a temperature dependence of about 0.13 nm/deg with the temperature range of more than 50-65/sup 0/C at around 0/sup 0/C. Differential quantum efficiency as high as 13 percent/ facet was obtained for the laser with power output of more than 5 mW/facet. The output spectrum below threshold indicated the strong wavelength selectivity of the DBR region, and themore » net gain difference between the main DBR mode and the adjacent submode was measured to be about 6 cm/sup -1/. No appreciable degradation and change of characteristics have been observed even after CW operation of more than 9770 h at 20/sup 0/C.« less

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Dept. of Physical Electronics, Tokyo Inst. of Tech., 2-12-1 O-okayama, Meguro-ky, Tokyo 152
OSTI Identifier:
6506162
Resource Type:
Journal Article
Journal Name:
IEEE J. Quant. Electron.; (United States)
Additional Journal Information:
Journal Volume: 20:2
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; BRAGG REFLECTION; DESIGN; FABRICATION; HETEROJUNCTIONS; WAVEGUIDES; COUPLING; EFFICIENCY; EMISSION SPECTRA; GAIN; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; INFRARED RADIATION; LASER MATERIALS; LASER RADIATION; MEDIUM TEMPERATURE; MODE CONTROL; TEMPERATURE DEPENDENCE; TEMPERATURE EFFECTS; THRESHOLD CURRENT; AMPLIFICATION; ARSENIC COMPOUNDS; ARSENIDES; CONTROL; CURRENTS; ELECTRIC CURRENTS; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; JUNCTIONS; LASERS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATIONS; REFLECTION; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SPECTRA; 420300* - Engineering- Lasers- (-1989)

Citation Formats

Tanbun-ek, T, Arai, S, Koyama, F, ShuMin, W, Suematsu, Y, and Suzaki, S. Static characteristics of 1. 5-1. 6. mu. m GaInAsP/InP buried heterostructure butt-jointed built-in integrated lasers. United States: N. p., 1984. Web. doi:10.1109/JQE.1984.1072354.
Tanbun-ek, T, Arai, S, Koyama, F, ShuMin, W, Suematsu, Y, & Suzaki, S. Static characteristics of 1. 5-1. 6. mu. m GaInAsP/InP buried heterostructure butt-jointed built-in integrated lasers. United States. doi:10.1109/JQE.1984.1072354.
Tanbun-ek, T, Arai, S, Koyama, F, ShuMin, W, Suematsu, Y, and Suzaki, S. Wed . "Static characteristics of 1. 5-1. 6. mu. m GaInAsP/InP buried heterostructure butt-jointed built-in integrated lasers". United States. doi:10.1109/JQE.1984.1072354.
@article{osti_6506162,
title = {Static characteristics of 1. 5-1. 6. mu. m GaInAsP/InP buried heterostructure butt-jointed built-in integrated lasers},
author = {Tanbun-ek, T and Arai, S and Koyama, F and ShuMin, W and Suematsu, Y and Suzaki, S},
abstractNote = {Lasing characteristics of GaInAsP/InP buried heterostructure butt-jointed built-in distributed Bragg reflector integrated lasers (BH-BJB-DBR lasers) intended for dynamic single mode operation in the wavelength range of 1.5-1.6 ..mu..m are given. In the first section, the coupling property between the active region and the butt-jointed external waveguide region is calculated to show the possibility of large fabrication tolerance. A coupling coefficient of more than 95 percent is estimated. Secondly, the GaInAsP/InP integrated lasers were fabricated and tested in the view of the static characteristics and the axial mode selection property. Lateral mode control was achieved by the use of a buried heterostructure, so that the axial and lateral modes were maintained to a fixed single mode. The lasers thus fabricated were operated in CW conditions at room temperature with a threshold current of about 100 mA. Single longitudinal mode operation was observed with a temperature dependence of about 0.13 nm/deg with the temperature range of more than 50-65/sup 0/C at around 0/sup 0/C. Differential quantum efficiency as high as 13 percent/ facet was obtained for the laser with power output of more than 5 mW/facet. The output spectrum below threshold indicated the strong wavelength selectivity of the DBR region, and the net gain difference between the main DBR mode and the adjacent submode was measured to be about 6 cm/sup -1/. No appreciable degradation and change of characteristics have been observed even after CW operation of more than 9770 h at 20/sup 0/C.},
doi = {10.1109/JQE.1984.1072354},
journal = {IEEE J. Quant. Electron.; (United States)},
number = ,
volume = 20:2,
place = {United States},
year = {1984},
month = {2}
}