Static characteristics of 1. 5-1. 6. mu. m GaInAsP/InP buried heterostructure butt-jointed built-in integrated lasers

Journal Article · Wed Feb 01 00:00:00 EST 1984 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1984.1072354· OSTI ID:6506162

Tanbun-ek, T; Arai, S; Koyama, F; ShuMin, W; Suematsu, Y; Suzaki, S

Lasing characteristics of GaInAsP/InP buried heterostructure butt-jointed built-in distributed Bragg reflector integrated lasers (BH-BJB-DBR lasers) intended for dynamic single mode operation in the wavelength range of 1.5-1.6 ..mu..m are given. In the first section, the coupling property between the active region and the butt-jointed external waveguide region is calculated to show the possibility of large fabrication tolerance. A coupling coefficient of more than 95 percent is estimated. Secondly, the GaInAsP/InP integrated lasers were fabricated and tested in the view of the static characteristics and the axial mode selection property. Lateral mode control was achieved by the use of a buried heterostructure, so that the axial and lateral modes were maintained to a fixed single mode. The lasers thus fabricated were operated in CW conditions at room temperature with a threshold current of about 100 mA. Single longitudinal mode operation was observed with a temperature dependence of about 0.13 nm/deg with the temperature range of more than 50-65/sup 0/C at around 0/sup 0/C. Differential quantum efficiency as high as 13 percent/ facet was obtained for the laser with power output of more than 5 mW/facet. The output spectrum below threshold indicated the strong wavelength selectivity of the DBR region, and the net gain difference between the main DBR mode and the adjacent submode was measured to be about 6 cm/sup -1/. No appreciable degradation and change of characteristics have been observed even after CW operation of more than 9770 h at 20/sup 0/C.

• Research Organization: Dept. of Physical Electronics, Tokyo Inst. of Tech., 2-12-1 O-okayama, Meguro-ky, Tokyo 152
• OSTI ID: 6506162
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. 20:2
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
BRAGG REFLECTION
DESIGN
FABRICATION
HETEROJUNCTIONS
WAVEGUIDES
COUPLING
EFFICIENCY
EMISSION SPECTRA
GAIN
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
INFRARED RADIATION
LASER MATERIALS
LASER RADIATION
MEDIUM TEMPERATURE
MODE CONTROL
TEMPERATURE DEPENDENCE
TEMPERATURE EFFECTS
THRESHOLD CURRENT
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
CONTROL
CURRENTS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
LASERS
MATERIALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATIONS
REFLECTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SPECTRA
420300* - Engineering- Lasers- (-1989)