{ital In} {ital situ} x-ray diffraction study of CoSi{sub 2} formation during annealing of a Co/Ti bilayer on Si(100)
- Argonne National Laboratory, Argonne, Illinois 60439 (United States)
- Semiconductor Research Center, Matsushita Electric Ind. Co., Osaka (Japan)
- Ginzton Research Center, Varian, Palo Alto, California 94304 (United States)
- Component Research Laboratory, Intel Corporation, Santa Clara, California 95052 (United States)
X-ray diffraction was performed {ital in} {ital situ} during annealing of a Co/Ti/Si(001) multilayer, which produced an epitaxial CoSi{sub 2} layer. The results indicate that the Ti layer did not stay intact during the reaction, and thus could not act like a membrane, moderating Co/Si interdiffusion. Strongly textured phases ({ital M}) formed prior to CoSi{sub 2} nucleation, and was unobservable upon completion of the anneal. Nucleation and growth of CoSi{sub 2} on Si(001) took place in the presence of {ital M}, new Co-Ti-(O) phases that were located at the metal/Si interface, and thus {ital M} might play an important role in the perfection of the silicide. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- DOE Contract Number:
- W-31-109-ENG-38
- OSTI ID:
- 64875
- Journal Information:
- Journal of Applied Physics, Vol. 77, Issue 12; Other Information: PBD: 15 Jun 1995
- Country of Publication:
- United States
- Language:
- English
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