RIE planarization process for magnetic bubble devices
A reactive ion etching process, which planarizes the silicon dioxide film deposited over steps in AlCu conductor patterns, has been developed for Permalloy magnetic bubble devices. A conventional fabrication sequence was used through deposition of the spacer SiO/sub 2/ layer which isolates AlCu conductors from Permalloy propagate elements. Prior to Permalloy deposition, however a thick photoresist layer was spin-coated on the SiO/sub 2/ layer and hard-baked to form a planar surface. The photoresist was then etched-back in a NF/sub 3/-CHF/sub 3/ plasma, in the reactive ion etching (RIE) mode, under conditions that etch photoresist and SiO/sub 2/ at nearly identical rates. The planar resist surface profile was thus transferred into the underlying SiO/sub 2/ film. Etch rates for photoresist and Siw/sub 2/ were determined as a function of feed gas composition, and the degree of planarization and thickness uniformity of the remaining SiO/sub 2/ were characterized.
- Research Organization:
- ATandT Bell Laboratories, Murray Hill, NJ
- OSTI ID:
- 6485818
- Report Number(s):
- CONF-840937-
- Journal Information:
- IEEE Trans. Magn.; (United States), Vol. MAG-21:2; Conference: Applied superconductivity conference, San Diego, CA, USA, 9 Sep 1984
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GENERAL PHYSICS
SILICON OXIDES
ETCHING
SUPERCONDUCTING DEVICES
FABRICATION
ALUMINIUM COMPOUNDS
COPPER COMPOUNDS
FILMS
PERMALLOY
SUPERCONDUCTORS
ALLOYS
CHALCOGENIDES
IRON ALLOYS
NICKEL ALLOYS
OXIDES
OXYGEN COMPOUNDS
SILICON COMPOUNDS
SURFACE FINISHING
TRANSITION ELEMENT COMPOUNDS
420201* - Engineering- Cryogenic Equipment & Devices