Heteroepitaxy of GaAs on Si and Ge using alternating, low-energy ion beams
Crystalline GaAs films have been grown epitaxially on silicon and germanium substrates at 400 /sup 0/C by direct deposition of alternating /sup 69/Ga and /sup 75/As layers from electromagnetically switched low-energy ion beams. Positive gallium and arsenic ions were extracted simultaneously from a single ion source and mass analyzed prior to deceleration to a controlled deposition energy of 30 or 40 eV. Atomic layers of gallium and arsenic were deposited alternately by switching the analyzing magnetic field repeatedly to select either the /sup 69/Ga/sup +/ or /sup 75/As/sup +/ species. The structure and composition of the resulting layers have been characterized by cross-section transmission electron microscopy and ion channeling/backscattering spectrometry. The best crystal quality was obtained for a GaAs layer deposited on Ge using a 30 eV beam. This layer gave an ion channeling minimum yield of approx. =6%. These results demonstrate the feasibility of growing isotopically pure, single-crystal compound semiconductor layers at relatively low temperatures by deposition from alternating, fully ionized, low-energy beams.
- Research Organization:
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
- OSTI ID:
- 6482947
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 54:15
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
VAPOR PHASE EPITAXY
GERMANIUM
VAPOR DEPOSITED COATINGS
SILICON
ARSENIC 75
BACKSCATTERING
CHEMICAL COMPOSITION
CRYSTAL STRUCTURE
EV RANGE 10-100
GALLIUM 69
HIGH TEMPERATURE
ION CHANNELING
TRANSMISSION ELECTRON MICROSCOPY
ARSENIC COMPOUNDS
ARSENIC ISOTOPES
ARSENIDES
CHANNELING
COATINGS
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
EPITAXY
EV RANGE
GALLIUM COMPOUNDS
GALLIUM ISOTOPES
INTERMEDIATE MASS NUCLEI
ISOMERIC TRANSITION ISOTOPES
ISOTOPES
METALS
MICROSCOPY
NUCLEI
ODD-EVEN NUCLEI
PNICTIDES
RADIOISOTOPES
SCATTERING
SECONDS LIVING RADIOISOTOPES
SEMIMETALS
STABLE ISOTOPES
360601* - Other Materials- Preparation & Manufacture
360602 - Other Materials- Structure & Phase Studies
360603 - Materials- Properties