Laser-controlled wet chemical etching for corrective trimming of thin films: application to aluminum
The localized enhancement of wet chemical etching by focussed laser beams for corrective trimming of thin films, and it application to the selective etching of aluminum, are discussed. Since wet etching can proceed repidly even without irradiation, it is as important to consider methods to reduce background etching as to enhance localized etching. The process developed for aluminum etching is based upon moderate local heating to activate a reaction which is normally suppressed by a corrosion inhibitor. Another approach to reduce background etching is solution cooling: for the activation energies for typical wet-etching, it should be possible to obtain acceptable contrast ratios between laser-enhanced and background rates over the temperature range which many concentrated etching solutions are liquid.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA); Massachusetts Inst. of Tech., Lexington (USA). Lincoln Lab.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6482850
- Report Number(s):
- SAND-85-2239C; CONF-851048-7; ON: DE86002168
- Resource Relation:
- Conference: 168. meeting of the Electrochemical Society, Las Vegas, NV, USA, 13 Oct 1985
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM
ETCHING
THIN FILMS
LASER RADIATION
MICROELECTRONICS
NITRIC ACID
PHOSPHORIC ACID
REMOVAL
TEMPERATURE DEPENDENCE
ELECTROMAGNETIC RADIATION
ELEMENTS
FILMS
HYDROGEN COMPOUNDS
INORGANIC ACIDS
METALS
RADIATIONS
SURFACE FINISHING
420800* - Engineering- Electronic Circuits & Devices- (-1989)