Method for tailoring the two-dimensional spatial gain distribution in optoelectronic devices and its application to tailored gain broad area semiconductor lasers capable of high power operation with very

Patent · Tue Dec 13 00:00:00 EST 1988

OSTI ID:6473785

Lindsey, C P; Yariv, A

This patent describes a broad area injection semiconductor laser having a predetermined two-dimensional pattern of injecting and noninjecting contacts over a broad area of the device in which laser the two-dimensional spatial gain profile is tailored over the broad area to conform to a predetermined tailored pattern of varying injection by a predetermined contact pattern of injecting and noninjecting areas over the broad area of the contact pattern being achieved by variation in the fractional surface coverage per unit area of injecting to noninjecting contact, thereby achieving the predetermined pattern of two-dimensional spatial gain profile.

• Assignee: California Institute of Technology, Pasadena, CA
• Patent Number(s): US 4791646
• OSTI ID: 6473785
• Resource Relation: Patent File Date: Filed date 23 Nov 1987
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
OPTICAL SYSTEMS
GAIN
SEMICONDUCTOR LASERS
CONFIGURATION
ELECTRO-OPTICAL EFFECTS
ELECTRONIC EQUIPMENT
SPATIAL DISTRIBUTION
AMPLIFICATION
DISTRIBUTION
EQUIPMENT
LASERS
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)