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Title: Method of producing hydrogenated amorphous silicon film

Abstract

This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and si, from a tungsten or carbon foil heated to a temperature of about 1400-1600/sup 0/C, in a vacuum of about 10-6 to 19-4 torr, to form a gaseous mixture of atomic hydrogen a atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.

Inventors:
Publication Date:
OSTI Identifier:
6470187
Patent Number(s):
US 4237150
Assignee:
Department of Energy
Resource Type:
Patent
Resource Relation:
Patent File Date: Filed date 18 Apr 1979; Other Information: PAT-APPL-030974
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; PRODUCTION; AMORPHOUS STATE; DEPOSITION; HIGH VACUUM; PHOTOCONDUCTIVITY; PYROLYSIS; SILANES; VERY HIGH TEMPERATURE; CHEMICAL REACTIONS; DECOMPOSITION; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; HYDRIDES; HYDROGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMIMETALS; SILICON COMPOUNDS; THERMOCHEMICAL PROCESSES; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Wiesmann, H J. Method of producing hydrogenated amorphous silicon film. United States: N. p., 1980. Web.
Wiesmann, H J. Method of producing hydrogenated amorphous silicon film. United States.
Wiesmann, H J. Tue . "Method of producing hydrogenated amorphous silicon film". United States.
@article{osti_6470187,
title = {Method of producing hydrogenated amorphous silicon film},
author = {Wiesmann, H J},
abstractNote = {This invention relates to hydrogenated amorphous silicon produced by thermally decomposing silane (SiH/sub 4/) or other gases comprising H and si, from a tungsten or carbon foil heated to a temperature of about 1400-1600/sup 0/C, in a vacuum of about 10-6 to 19-4 torr, to form a gaseous mixture of atomic hydrogen a atomic silicon, and depositing said gaseos mixture onto a substrate independent of and outside said source of thermal decomposition, to form hydrogenated amorphous silicon. The presence of an ammonia atmosphere in the vacuum chamber enhances the photoconductivity of the hydrogenated amorphous silicon film.},
doi = {},
url = {https://www.osti.gov/biblio/6470187}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1980},
month = {12}
}