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Title: Process for producing silicon

Abstract

A process of producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

Inventors:
;
Publication Date:
OSTI Identifier:
6467426
Application Number:
ON: DE83010506
Assignee:
EDB-83-074126
DOE Contract Number:  
AC02-77CH00178
Resource Type:
Patent
Resource Relation:
Other Information: Portions are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON; ELECTROPLATING; ANODES; CATHODES; COPPER ALLOYS; ELECTROLYTES; PURIFICATION; ALLOYS; DEPOSITION; ELECTRODEPOSITION; ELECTRODES; ELECTROLYSIS; ELEMENTS; LYSIS; PLATING; SEMIMETALS; SURFACE COATING; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360601 - Other Materials- Preparation & Manufacture

Citation Formats

Olson, J.M., and Carleton, K.L. Process for producing silicon. United States: N. p., 1982. Web.
Olson, J.M., & Carleton, K.L. Process for producing silicon. United States.
Olson, J.M., and Carleton, K.L. Thu . "Process for producing silicon". United States.
@article{osti_6467426,
title = {Process for producing silicon},
author = {Olson, J.M. and Carleton, K.L.},
abstractNote = {A process of producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1982},
month = {6}
}