Dependence of barrier height on energy gap in Au n-type GaAs/sub 1-x/P/sub x/ Schottky diodes
Journal Article
·
· Appl. Phys. Commun.; (United States)
OSTI ID:6463123
Data are presented which show that the Schottky barrier height for gold on the ternary compound GaAs/sub 1-x/P/sub x/ follows the commonly assumed two-thirds of the band gap relationship. An explanation is given for the reason that previously published data did not exhibit this behavior.
- Research Organization:
- California Inst. of Tech., Pasadena
- OSTI ID:
- 6463123
- Journal Information:
- Appl. Phys. Commun.; (United States), Vol. 1:1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
ARSENIC COMPOUNDS
ENERGY GAP
GALLIUM PHOSPHATES
AFFINITY
CURRENT DENSITY
DEPOSITION
DISLOCATIONS
ELECTRONEGATIVITY
ELECTRONS
ETCHING
FABRICATION
FERMI LEVEL
GOLD
INTERFACES
OXIDES
SCHOTTKY BARRIER DIODES
THICKNESS
VARIATIONS
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIMENSIONS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY LEVELS
FERMIONS
GALLIUM COMPOUNDS
LEPTONS
LINE DEFECTS
METALS
OXYGEN COMPOUNDS
PHOSPHATES
PHOSPHORUS COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SURFACE FINISHING
TRANSITION ELEMENTS
360603* - Materials- Properties
ARSENIC COMPOUNDS
ENERGY GAP
GALLIUM PHOSPHATES
AFFINITY
CURRENT DENSITY
DEPOSITION
DISLOCATIONS
ELECTRONEGATIVITY
ELECTRONS
ETCHING
FABRICATION
FERMI LEVEL
GOLD
INTERFACES
OXIDES
SCHOTTKY BARRIER DIODES
THICKNESS
VARIATIONS
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIMENSIONS
ELEMENTARY PARTICLES
ELEMENTS
ENERGY LEVELS
FERMIONS
GALLIUM COMPOUNDS
LEPTONS
LINE DEFECTS
METALS
OXYGEN COMPOUNDS
PHOSPHATES
PHOSPHORUS COMPOUNDS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SURFACE FINISHING
TRANSITION ELEMENTS
360603* - Materials- Properties