Monolithically Peltier-cooled laser diodes

Journal Article · Sun Apr 01 00:00:00 EST 1984 · J. Lightwave Technol.; (United States)

DOI:https://doi.org/10.1109/JLT.1984.1073592· OSTI ID:6458615

Hava, S; Hunsperger, R G; Sequeira, H B

A new method of cooling a GaAs/GaAlAs laser in an optical integrated circuit or on a discrete chip, by adding an integral thermoelectric (Peltier) cooling and heat spreading device to the laser, is presented. This cooling both reduces and stabilizes the laser junction temperature to minimize such deleterious effects as wavelength drift due to heating. A unified description of the electrical and thermal properties of a monolithic semiconductor mesa structure is given. Here it is shown that an improvement in thermal characteristics is obtained by depositing a relatively thick metallic layer, and by using this layer as a part of an active Peltier structure. Experimental results reveal a 14-percent increase in emitted power (external quantum efficiency) due to passive heat spreading and a further 8-percent if its Peltier cooler is operated. Fabrication techniques used to obtain devices exhibiting the above performance characteristics are given. 21 references.

• Research Organization: Negev Univ., Beersheba, Israel
• OSTI ID: 6458615
• Journal Information: J. Lightwave Technol.; (United States), Vol. LT-2
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
INTEGRATED CIRCUITS
COOLING
SEMICONDUCTOR LASERS
FABRICATION
HETEROJUNCTIONS
QUANTUM EFFICIENCY
SEMICONDUCTOR DIODES
EFFICIENCY
ELECTRONIC CIRCUITS
JUNCTIONS
LASERS
MICROELECTRONIC CIRCUITS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
420800* - Engineering- Electronic Circuits & Devices- (-1989)