Embedded-mirror semiconductor laser

Journal Article · Sat Sep 01 00:00:00 EDT 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95309· OSTI ID:6451580

Laidig, W D; Lee, J W; Caldwell, P J

Data are presented demonstrating the operation of a current-injection laser diode with embedded reflectors instead of etched or cleaved facets. The laser structure, grown by molecular beam epitaxy, uses AlAs-GaAs superlattices SL's in place of conventional Al/sub x/Ga/sub 1-x/As cladding layers. The sample is patterned, etched, and Zn diffused to selectively disorder the SL cladding layers producing a approx.200 x approx.100 ..mu..m rectangular laser cavity embedded in the surrounding Al/sub x/Ga/sub 1-x/As. Following Si/sub 3/N/sub 4/ deposition and metallization, the diodes are cut (not cleaved) with intentionally damaged edges. These devices operate as lasers (77 K, pulsed operation) with a mode spacing corresponding to either the approx.100-..mu..m or the approx.200-..mu..m cavity length formed by the selective interdiffusion of the SL cladding layer. This embedded-mirror laser structure may be useful in the development of optical integrated circuits by allowing semiconductor lasers to be monolithically integrated with other optical devices.

• Research Organization: North Carolina State University, Department of Electrical and Computer Engineering, Raleigh, North Carolina 27695-7911
• OSTI ID: 6451580
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 45:5
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
FABRICATION
LASER MIRRORS
OPERATION
ALUMINIUM ARSENIDES
ETCHING
GALLIUM ARSENIDES
LASER CAVITIES
MOLECULAR BEAM EPITAXY
SILICON NITRIDES
SUPERLATTICES
SURFACE COATING
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DEPOSITION
EPITAXY
GALLIUM COMPOUNDS
LASERS
MIRRORS
NITRIDES
NITROGEN COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)