Germanium content dependence of radiation damage in strained Si[sub 1[minus]x]Ge[sub x] epitaxial devices

Conference · Thu Dec 01 00:00:00 EST 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6450302

Ohyama, H ^[1]; Vanhellemont, J; Poortmans, J; Caymax, M ^[2]; Takami, Y ^[3]; Sunaga, H ^[4]; Clauws, P ^[5]

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1. Kumamoto National College of Technology (Japan)
2. IMEC, Leuven (Belgium)
3. Rikkyo Univ., Kanagawa (Japan). Inst. for Atomic Energy
4. Japan Atomic Energy Research Inst., Gunma (Japan). Takasaki Radiation Chemistry Research Establishment
5. RUG, Gent (Belgium)

The irradiation damage in n[sup +]-Si/p[sup +]-Si[sub 1[minus]x]Ge[sub x] epitaxial diodes and n[sup +]-Si/p[sup +]-Si[sub 1[minus]x]Ge[sub x]/n-Si epitaxial heterojunction bipolar transistors (HBTs) by fast neutrons and MeV electrons is studied as a function of fluence and germanium content for the first time. The degradation of the electrical performance of both diodes and HBTs by irradiation increases with increasing fluence, while it decreases with increasing germanium content. The damage coefficient of reverse current for x= 0.12 and 0.16 diodes irradiated by neutrons is calculated to be 6.2 [times] 10[sup [minus]21] and 5.5 [times] 10[sup [minus]21] n[sup [minus]1]Acm[sup 2], respectively. That of h[sub FE] for electron-irradiated x= 0.08, 0.12 and 0.16 HBTs is 7.6 [times] 10[sup [minus]16], 2.7 [times] 10[sup [minus]16] and 1.6 [times] 10[sup [minus]16] e[sup [minus]1]cm[sup 2], respectively.

• OSTI ID: 6450302
• Report Number(s): CONF-940726-; CODEN: IETNAE
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 41:6Pt1; Conference: 31. annual international nuclear and space radiation effects conference, Tucson, AZ (United States), 18-22 Jul 1994; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
JUNCTION TRANSISTORS
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR DIODES
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
GERMANIUM SILICIDES
NEUTRON FLUENCE
SILICON
DATA
ELEMENTS
GERMANIUM COMPOUNDS
INFORMATION
NUMERICAL DATA
PHYSICAL PROPERTIES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems