GaAs tunnel junction grown by metalorganic vapor-phase epitaxy for multigap cascade solar cells

Journal Article · Tue Sep 01 00:00:00 EDT 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339528· OSTI ID:6448134

Basmaji, P; Guittard, M; Rudra, A; Carlin, J F; Gibart, P

GaAs tunnel p-n junctions with peak current densities up to 45 A cm/sup -2/ were grown by metallorganic vapor-phase epitaxy. These tunnel diodes are suitable for intercell ohmic contacts between the case of integrated tandem photovoltaic subcells in solar cells based on GaAs. The peak current is high enough for concentration up to C = 1000.

• Research Organization: Laboratoire de Physique du Solide et Energie Solaire, CNRS, Parc de Sophia Antipolis, Rue Bernard Gregory 06560 Valbonne, France
• OSTI ID: 6448134
• Journal Information: J. Appl. Phys.; (United States), Vol. 62:5
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
42 ENGINEERING
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDE SOLAR CELLS
FABRICATION
PHOTOCURRENTS
TUNNEL DIODES
GALLIUM ARSENIDE SOLAR CELLS
CHEMICAL VAPOR DEPOSITION
GALLIUM ARSENIDES
P-N JUNCTIONS
VAPOR PHASE EPITAXY
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CURRENTS
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRIC CURRENTS
EPITAXY
EQUIPMENT
GALLIUM COMPOUNDS
JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
140501* - Solar Energy Conversion- Photovoltaic Conversion
420800 - Engineering- Electronic Circuits & Devices- (-1989)
360603 - Materials- Properties