Neutron-induced single event burnout in high voltage electronics

Journal Article · Mon Dec 01 00:00:00 EST 1997 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.659062· OSTI ID:644228

Normand, E; Wert, J L; Oberg, D L; Majewski, P P ^[1]; Voss, P ^[2]; Wender, S A ^[3]

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1. Boeing Defense and Space Group, Seattle, WA (United States)
2. eupec, Pretzfeld (Germany)
3. Los Alamos National Lab., NM (United States)

Energetic neutrons with an atmospheric neutron spectrum, which were demonstrated to induce single event burnout in power MOSFETs, have been shown to induce burnout in high voltage (>3,000V) electronics when operated at voltages as low as 50% of rated voltage. The laboratory failure rates correlate well with field failure rates measured in Europe.

• OSTI ID: 644228
• Report Number(s): CONF-970711-; ISSN 0018-9499; TRN: 98:008160
• Journal Information: IEEE Transactions on Nuclear Science, Vol. 44, Issue 6Pt1; Conference: 34. IEEE nuclear and space radiation effects conference, Snowmass, CO (United States), 21-25 Jul 1997; Other Information: PBD: Dec 1997
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
PHYSICAL RADIATION EFFECTS
ERRORS
MOSFET
ELECTRONIC EQUIPMENT
NEUTRONS