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Title: Forces between cavities and dislocations and their influence on semiconductor microstructures

Abstract

An approximate continuum method for computing the energy of interaction between cavities and strain fields in complex configurations is described and tested by comparison with results for simple, exactly solvable cases. The method is then used to examine semiquantitatively the effective forces between cavities and screw and edge dislocations, taking into account the effects of surface tension and pressurized gas within the cavity. The discussion encompasses not only local interactions involving individual cavities, but also the combined forces acting upon dislocations in the vicinity of multiple cavities and simultaneously within range of external-surface image forces. The results are used to interpret a range of observed microstructures in semiconductors and to assess the possible exploitation of cavity[endash]dislocation binding for dislocation control in Si[endash]Ge heteroepitaxial structures. [copyright] [ital 1999 American Institute of Physics.]

Authors:
;  [1]
  1. (Sandia National Laboratories, Albuquerque, New Mexico 87185-1056 (United States))
Publication Date:
OSTI Identifier:
6441144
Alternate Identifier(s):
OSTI ID: 6441144
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 86:6; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BUBBLES; CAVITIES; EDGE DISLOCATIONS; GALLIUM ARSENIDES; GALLIUM NITRIDES; GERMANIUM; INTERACTIONS; MICROSTRUCTURE; SCREW DISLOCATIONS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SILICON; STRAINS; SURFACE TENSION; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISLOCATIONS; ELEMENTS; GALLIUM COMPOUNDS; LINE DEFECTS; MATERIALS; METALS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SEMIMETALS; SURFACE PROPERTIES 360602* -- Other Materials-- Structure & Phase Studies

Citation Formats

Myers, S.M., and Follstaedt, D.M. Forces between cavities and dislocations and their influence on semiconductor microstructures. United States: N. p., 1999. Web. doi:10.1063/1.371167.
Myers, S.M., & Follstaedt, D.M. Forces between cavities and dislocations and their influence on semiconductor microstructures. United States. doi:10.1063/1.371167.
Myers, S.M., and Follstaedt, D.M. Wed . "Forces between cavities and dislocations and their influence on semiconductor microstructures". United States. doi:10.1063/1.371167.
@article{osti_6441144,
title = {Forces between cavities and dislocations and their influence on semiconductor microstructures},
author = {Myers, S.M. and Follstaedt, D.M.},
abstractNote = {An approximate continuum method for computing the energy of interaction between cavities and strain fields in complex configurations is described and tested by comparison with results for simple, exactly solvable cases. The method is then used to examine semiquantitatively the effective forces between cavities and screw and edge dislocations, taking into account the effects of surface tension and pressurized gas within the cavity. The discussion encompasses not only local interactions involving individual cavities, but also the combined forces acting upon dislocations in the vicinity of multiple cavities and simultaneously within range of external-surface image forces. The results are used to interpret a range of observed microstructures in semiconductors and to assess the possible exploitation of cavity[endash]dislocation binding for dislocation control in Si[endash]Ge heteroepitaxial structures. [copyright] [ital 1999 American Institute of Physics.]},
doi = {10.1063/1.371167},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = ,
volume = 86:6,
place = {United States},
year = {1999},
month = {9}
}