skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N[sup +] implantation

Abstract

We have studied the optical properties of nitrogen implanted GaAs and AlGaAs samples. The fundamental band-gap energy has been found to decrease with the increasing N[sup +] implantation dose in a manner similar to that commonly observed in GaNAs and GaInNAs alloys grown by molecular beam epitaxy or metal organic chemical vapor deposition. Our results indicate that GaN[sub x]As[sub 1[minus]x] and Al[sub x]Ga[sub 1[minus]x]N[sub y]As[sub 1[minus]y] alloys can be formed by implantation of nitrogen followed by appropriate postimplantation annealing treatments. As inferred from the magnitude of the band gap shift, the percentage of the implanted N atoms incorporated on the substitutional As sites is estimated to be around 12[percent]. [copyright] [ital 1999 American Institute of Physics.]

Authors:
; ; ;  [1];  [2];  [3]
  1. (Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States))
  2. (Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Sciences and Mineral Engineering, University of California, Berkeley, California 94720 (United States))
  3. (Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra (Australia))
Publication Date:
OSTI Identifier:
6439618
Alternate Identifier(s):
OSTI ID: 6439618
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 75:10; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; ALUMINIUM COMPOUNDS; ANNEALING; ENERGY GAP; GALLIUM ARSENIDES; GALLIUM NITRIDES; ION IMPLANTATION; NITROGEN; NITROGEN IONS; OPTICAL REFLECTION; VISIBLE SPECTRA; ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; ELEMENTS; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES; REFLECTION; SPECTRA 360605* -- Materials-- Radiation Effects

Citation Formats

Shan, W., Yu, K.M., Walukiewicz, W., Ager, J.W. III, Haller, E.E., and Ridgway, M.C. Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N[sup +] implantation. United States: N. p., 1999. Web. doi:10.1063/1.124951.
Shan, W., Yu, K.M., Walukiewicz, W., Ager, J.W. III, Haller, E.E., & Ridgway, M.C. Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N[sup +] implantation. United States. doi:10.1063/1.124951.
Shan, W., Yu, K.M., Walukiewicz, W., Ager, J.W. III, Haller, E.E., and Ridgway, M.C. Wed . "Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N[sup +] implantation". United States. doi:10.1063/1.124951.
@article{osti_6439618,
title = {Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N[sup +] implantation},
author = {Shan, W. and Yu, K.M. and Walukiewicz, W. and Ager, J.W. III and Haller, E.E. and Ridgway, M.C.},
abstractNote = {We have studied the optical properties of nitrogen implanted GaAs and AlGaAs samples. The fundamental band-gap energy has been found to decrease with the increasing N[sup +] implantation dose in a manner similar to that commonly observed in GaNAs and GaInNAs alloys grown by molecular beam epitaxy or metal organic chemical vapor deposition. Our results indicate that GaN[sub x]As[sub 1[minus]x] and Al[sub x]Ga[sub 1[minus]x]N[sub y]As[sub 1[minus]y] alloys can be formed by implantation of nitrogen followed by appropriate postimplantation annealing treatments. As inferred from the magnitude of the band gap shift, the percentage of the implanted N atoms incorporated on the substitutional As sites is estimated to be around 12[percent]. [copyright] [ital 1999 American Institute of Physics.]},
doi = {10.1063/1.124951},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = ,
volume = 75:10,
place = {United States},
year = {1999},
month = {9}
}