Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N[sup +] implantation
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
- Materials Sciences Division, Lawrence Berkeley National Laboratory, and Department of Materials Sciences and Mineral Engineering, University of California, Berkeley, California 94720 (United States)
- Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra (Australia)
We have studied the optical properties of nitrogen implanted GaAs and AlGaAs samples. The fundamental band-gap energy has been found to decrease with the increasing N[sup +] implantation dose in a manner similar to that commonly observed in GaNAs and GaInNAs alloys grown by molecular beam epitaxy or metal organic chemical vapor deposition. Our results indicate that GaN[sub x]As[sub 1[minus]x] and Al[sub x]Ga[sub 1[minus]x]N[sub y]As[sub 1[minus]y] alloys can be formed by implantation of nitrogen followed by appropriate postimplantation annealing treatments. As inferred from the magnitude of the band gap shift, the percentage of the implanted N atoms incorporated on the substitutional As sites is estimated to be around 12[percent]. [copyright] [ital 1999 American Institute of Physics.]
- OSTI ID:
- 6439618
- Journal Information:
- Applied Physics Letters, Vol. 75:10; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANNEALING
ENERGY GAP
GALLIUM ARSENIDES
GALLIUM NITRIDES
ION IMPLANTATION
NITROGEN
NITROGEN IONS
OPTICAL REFLECTION
VISIBLE SPECTRA
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
ELEMENTS
GALLIUM COMPOUNDS
HEAT TREATMENTS
IONS
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
PNICTIDES
REFLECTION
SPECTRA
360605* - Materials- Radiation Effects