skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctions

Abstract

The optical modulation technique of photoreflectance (PR) has been applied to characterize the interband transitions in GaAs/AlGaAs multiple quantum wells (MQW) and modulation-doped heterojunctions at room temperature. The spectra of the MQW show derivative-like reflectance features due to allowed interband transitions from heavy and light hole subbands to conduction subbands, and the E0(Gamma/8,v/ to Gamma/6,c/) transitions of the AlGaAs layers. The data are consistent with a square well calculation using a conduction-band offset of 60 percent of the band-gap discontinuity. For modulation-doped heterojunctions, a correlation is observed between a PR feature approximately 18 meV above the GaAs fundamental gap and the presence of a two-dimensional electron gas. 14 references.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Naval Research Lab., Washington, DC
OSTI Identifier:
6439146
Resource Type:
Journal Article
Journal Name:
Appl. Phys. Lett.; (United States)
Additional Journal Information:
Journal Volume: 46
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; ENERGY SPECTRA; HELIUM-NEON LASERS; HETEROJUNCTIONS; MODULATION; PHOTONS; REFLECTIVITY; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ELEMENTARY PARTICLES; GALLIUM COMPOUNDS; GAS LASERS; JUNCTIONS; LASERS; MASSLESS PARTICLES; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SPECTRA; SURFACE PROPERTIES; 360602* - Other Materials- Structure & Phase Studies

Citation Formats

Glembocki, O J, Shanabrook, B V, Bottka, N, Beard, W T, and Comas, J. Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctions. United States: N. p., 1985. Web. doi:10.1063/1.95784.
Glembocki, O J, Shanabrook, B V, Bottka, N, Beard, W T, & Comas, J. Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctions. United States. https://doi.org/10.1063/1.95784
Glembocki, O J, Shanabrook, B V, Bottka, N, Beard, W T, and Comas, J. Wed . "Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctions". United States. https://doi.org/10.1063/1.95784.
@article{osti_6439146,
title = {Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctions},
author = {Glembocki, O J and Shanabrook, B V and Bottka, N and Beard, W T and Comas, J},
abstractNote = {The optical modulation technique of photoreflectance (PR) has been applied to characterize the interband transitions in GaAs/AlGaAs multiple quantum wells (MQW) and modulation-doped heterojunctions at room temperature. The spectra of the MQW show derivative-like reflectance features due to allowed interband transitions from heavy and light hole subbands to conduction subbands, and the E0(Gamma/8,v/ to Gamma/6,c/) transitions of the AlGaAs layers. The data are consistent with a square well calculation using a conduction-band offset of 60 percent of the band-gap discontinuity. For modulation-doped heterojunctions, a correlation is observed between a PR feature approximately 18 meV above the GaAs fundamental gap and the presence of a two-dimensional electron gas. 14 references.},
doi = {10.1063/1.95784},
url = {https://www.osti.gov/biblio/6439146}, journal = {Appl. Phys. Lett.; (United States)},
number = ,
volume = 46,
place = {United States},
year = {1985},
month = {5}
}