Reduction of 1/f noise in multiplexed linear In[sub 0. 53]Ga[sub 0. 47]As detector arrays via epitaxial doping

Journal Article · Mon Feb 01 00:00:00 EST 1993 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.182505· OSTI ID:6434836

Joshi, A M; Olsen, G H; Ban, V S; Mykietyn, E; Lange, M J ^[1]; Mohr, D T ^[2]

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1. EPITAXX, Inc., Trenton, NJ (United States)
2. EG and G Princeton Applied Research, Trenton, NJ (United States)

A significant (2-5X) reduction in 1/f noise was observed in the In[sub 0.53]Ga[sub 0.47]As photodetector arrays read out by a PMOS multiplexer, when the epitaxial InP cap' layer doping was changed from undoped i.e., n-type [approximately]5 [times] 10[sup 17] cm[sup [minus]3] to sulfur-doped n type of about 3 [times] 10[sup 16] cm[sup [minus]3]. A further decrease was observed when the InP buffer' layer was also changed from undoped to sulfur-doped n type of about 5 [times] 10[sup 17] cm[sup [minus]3]. Data are also presented for the variation of 1/f noise, within a temperature range of 18 C to [minus]40 C. Surface states at the InP cap/SiN interface appear to be the primary source of 1/f noise, with the bulk states at the n[sup [minus]] In[sub 0.53]Ga[sub 0.47]As/InP buffer heterointerface being a secondary source of 1/f noise. Increased n-type doping in the high-bandgap InP cap and buffer layers may reduce electron trapping, and thus 1/f noise. The measured noise spectrum of InGaAs photodetectors varies as f[sup y] with y being approximately [minus]0.45 for device structures with doped and undoped InP cap' layers. For a doped InP buffer' layer, this value of y is [minus]0.3. The authors observed no change in exponent y for temperatures between 18 C and [minus]40 C for any device structure.

• OSTI ID: 6434836
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Vol. 40:2; ISSN 0018-9383
• Country of Publication: United States
• Language: English

Related Subjects

47 OTHER INSTRUMENTATION
PHOTODETECTORS
NOISE
CARBON DIOXIDE
CARBON MONOXIDE
DESIGN
DOPED MATERIALS
EARTH ATMOSPHERE
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
LEAKAGE CURRENT
MEASURING INSTRUMENTS
MULTIPLEXERS
USES
ARSENIC COMPOUNDS
ARSENIDES
CARBON COMPOUNDS
CARBON OXIDES
CHALCOGENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTRONIC EQUIPMENT
EQUIPMENT
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
MATERIALS
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
440600* - Optical Instrumentation- (1990-)