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Title: Three micron CMOS technology for custom high reliability and radiation-hardened integrated circuits

Abstract

A new radiation hardened three micron CMOS process has been developed. It uses a guardbanded P-well with single level polysilicon and single level metal. Plasma processing is used for etching the critical dimension levels of polysilicon, contact window and metal. To date, fifteen designs have been fabricated using the technology. These include CMOS equivalents of the Intel 8085 8-bit microprocessor family, two custom encryption chips of about 19,000 transistors each and custom logic designs using Sandia's standard cell family. Performance of the devices has exceeded all specifications.

Authors:
; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (USA)
OSTI Identifier:
6434795
Report Number(s):
SAND-83-0823C; CONF-830537-1
ON: DE83010825
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Conference
Resource Relation:
Conference: Custom integrated circuits conference, Rochester, NY, USA, 23 May 1983; Other Information: Portions are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 42 ENGINEERING; INTEGRATED CIRCUITS; FABRICATION; RADIATION HARDENING; DESIGN; ELECTRIC CONTACTS; ETCHING; MICROPROCESSORS; MOS TRANSISTORS; PERFORMANCE; POLYCRYSTALS; SILICON; COMPUTERS; CRYSTALS; ELECTRICAL EQUIPMENT; ELECTRONIC CIRCUITS; ELEMENTS; EQUIPMENT; HARDENING; MICROELECTRONIC CIRCUITS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMIMETALS; SURFACE FINISHING; TRANSISTORS; 440200* - Radiation Effects on Instrument Components, Instruments, or Electronic Systems; 420800 - Engineering- Electronic Circuits & Devices- (-1989)

Citation Formats

Nordstrom, T V, Light, R W, and Sexton, F W. Three micron CMOS technology for custom high reliability and radiation-hardened integrated circuits. United States: N. p., 1983. Web.
Nordstrom, T V, Light, R W, & Sexton, F W. Three micron CMOS technology for custom high reliability and radiation-hardened integrated circuits. United States.
Nordstrom, T V, Light, R W, and Sexton, F W. Sat . "Three micron CMOS technology for custom high reliability and radiation-hardened integrated circuits". United States.
@article{osti_6434795,
title = {Three micron CMOS technology for custom high reliability and radiation-hardened integrated circuits},
author = {Nordstrom, T V and Light, R W and Sexton, F W},
abstractNote = {A new radiation hardened three micron CMOS process has been developed. It uses a guardbanded P-well with single level polysilicon and single level metal. Plasma processing is used for etching the critical dimension levels of polysilicon, contact window and metal. To date, fifteen designs have been fabricated using the technology. These include CMOS equivalents of the Intel 8085 8-bit microprocessor family, two custom encryption chips of about 19,000 transistors each and custom logic designs using Sandia's standard cell family. Performance of the devices has exceeded all specifications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1983},
month = {1}
}

Conference:
Other availability
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