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Title: Open volume defects (measured by positron annihilation spectroscopy) in thin film hydrogen-silsesquioxane spin-on-glass; correlation with dielectric constant

Abstract

We used Doppler broadening positron annihilation spectroscopy as a nanovoid characterization tool in the study of low dielectric constant (low-[ital k]) hydrogen-silsesquioxane (HSSQ) thin films. The high void sensitivity of this method, combined with depth-resolving capability, enables one to observe changes in the [ital local] electronic environment in a thin film. We established a correlation between the annihilation parameters and the dielectric properties for a series of samples subjected to various annealing conditions in nitrogen. Qualitative differences are found between the pore structures of isochronally and isothermally annealed films, suggesting a complex relationship between the film dielectric constant and pore size and pore density. Results showing changes in the chemical environment caused by exposure to various processing environments are also presented. First, the changes in the HSSQ films were determined after a year of exposure to ambient air in which the film properties changed with time due to water absorption. Second, the intentional oxidation of the HSSQ films by exposure to an oxygen plasma were found to propagate from the film surface towards the substrate. A 10 min oxygen-plasma exposure resulted in a 130-nm-thick layer of oxidized HSSQ, with a corresponding high [ital k] (=3.6). A decrease in [ital k]more » (to 3.3), with a subsequent 400 hthinsp;[degree]C 30 min forming gas anneal was attributed to the void formation at the HSSQ/Si interface. [copyright] [ital 1999 American Institute of Physics.] thinsp« less

Authors:
; ;  [1]; ;  [2]
  1. (Department of Physics, Washington State University, Pullman, Washington 99164-2814 (United States))
  2. (IBM T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (United States))
Publication Date:
OSTI Identifier:
6433720
Alternate Identifier(s):
OSTI ID: 6433720
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 86:6; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION; ANNEALING; ANNIHILATION; DEFECTS; DIELECTRIC PROPERTIES; DOPPLER BROADENING; ORGANIC COMPOUNDS; OXIDATION; PERMITTIVITY; POROUS MATERIALS; POSITRONS; SPIN-ON COATINGS; THIN FILMS; VOIDS; ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; BASIC INTERACTIONS; CHEMICAL REACTIONS; COATINGS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC INTERACTIONS; ELEMENTARY PARTICLES; FERMIONS; FILMS; HEAT TREATMENTS; INTERACTIONS; LEPTONS; LINE BROADENING; MATERIALS; MATTER; PARTICLE INTERACTIONS; PHYSICAL PROPERTIES; SORPTION 360602* -- Other Materials-- Structure & Phase Studies

Citation Formats

Petkov, M.P., Weber, M.H., Lynn, K.G., Rodbell, K.P., and Cohen, S.A. Open volume defects (measured by positron annihilation spectroscopy) in thin film hydrogen-silsesquioxane spin-on-glass; correlation with dielectric constant. United States: N. p., 1999. Web. doi:10.1063/1.371174.
Petkov, M.P., Weber, M.H., Lynn, K.G., Rodbell, K.P., & Cohen, S.A. Open volume defects (measured by positron annihilation spectroscopy) in thin film hydrogen-silsesquioxane spin-on-glass; correlation with dielectric constant. United States. doi:10.1063/1.371174.
Petkov, M.P., Weber, M.H., Lynn, K.G., Rodbell, K.P., and Cohen, S.A. Wed . "Open volume defects (measured by positron annihilation spectroscopy) in thin film hydrogen-silsesquioxane spin-on-glass; correlation with dielectric constant". United States. doi:10.1063/1.371174.
@article{osti_6433720,
title = {Open volume defects (measured by positron annihilation spectroscopy) in thin film hydrogen-silsesquioxane spin-on-glass; correlation with dielectric constant},
author = {Petkov, M.P. and Weber, M.H. and Lynn, K.G. and Rodbell, K.P. and Cohen, S.A.},
abstractNote = {We used Doppler broadening positron annihilation spectroscopy as a nanovoid characterization tool in the study of low dielectric constant (low-[ital k]) hydrogen-silsesquioxane (HSSQ) thin films. The high void sensitivity of this method, combined with depth-resolving capability, enables one to observe changes in the [ital local] electronic environment in a thin film. We established a correlation between the annihilation parameters and the dielectric properties for a series of samples subjected to various annealing conditions in nitrogen. Qualitative differences are found between the pore structures of isochronally and isothermally annealed films, suggesting a complex relationship between the film dielectric constant and pore size and pore density. Results showing changes in the chemical environment caused by exposure to various processing environments are also presented. First, the changes in the HSSQ films were determined after a year of exposure to ambient air in which the film properties changed with time due to water absorption. Second, the intentional oxidation of the HSSQ films by exposure to an oxygen plasma were found to propagate from the film surface towards the substrate. A 10 min oxygen-plasma exposure resulted in a 130-nm-thick layer of oxidized HSSQ, with a corresponding high [ital k] (=3.6). A decrease in [ital k] (to 3.3), with a subsequent 400 hthinsp;[degree]C 30 min forming gas anneal was attributed to the void formation at the HSSQ/Si interface. [copyright] [ital 1999 American Institute of Physics.] thinsp},
doi = {10.1063/1.371174},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = ,
volume = 86:6,
place = {United States},
year = {1999},
month = {9}
}