Linewidth enhancement factor for InGaAs/InP strained quantum well lasers

Journal Article · Mon Oct 01 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103444· OSTI ID:6432069

Dutta, N K; Temkin, H; Tanbun-Ek, T; Logan, R ^[1]

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1. AT T Bell Laboratories, Murray Hill, NJ (USA)

The linewidth enhancement factor {alpha} in an InGaAs/InP strained-layer multiple quantum well (MQW) laser emitting near 1.55 {mu}m has been determined from the spontaneous emission spectra below threshold. The active layers in the MQW structure in this device are under 0.7% compressive strain. The measured {alpha} at the lasing wavelength is 2.0. The calculation of {alpha} using interpolated bandstructure parameters shows that it varies rapidly with injected carrier density and the calculated value for our device is close to the measured value. The small {alpha} for strained MQW InGaAs lasers should result in performance improvement that are advantageous for lightwave system application.

• OSTI ID: 6432069
• Journal Information: Applied Physics Letters; (USA), Vol. 57:14; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
LINE WIDTHS
CORRELATIONS
ELECTRONIC STRUCTURE
LINE BROADENING
MODULATION
PERFORMANCE
REFRACTIVITY
LASERS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)