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Title: Photoelectrochemical behavior of silicon coated with a catalytic and protective film of titanium-ruthenium oxide

Journal Article · · Sov. Electrochem. (Engl. Transl.); (United States)
OSTI ID:6421214

Halide ion photooxidation was studied at photoanodes of n-type silicon with a protective film of ruthenium and titanium oxide applied by various methods. Polarization curves were recorded with a potentiostat, the capacitance curves were recorded and the electrode was polarized with a primary battery. All electrodes produced were photosensitive. The film was shown to protect the silicon against photocorrosion. The photoelectric properties of the silicon-film-solution system can be described by a Schottky diode model. A more or less pronounced pinning of the Fermi level was observed at the silicon/film interface.

Research Organization:
A. N. Frumkin Institute of Electrochemistry, Moscow (USSR)
OSTI ID:
6421214
Journal Information:
Sov. Electrochem. (Engl. Transl.); (United States), Vol. 23:8; Other Information: Translated from Elektrokhimiya; 23: No. 8, 1113-1117(Aug 1987)
Country of Publication:
United States
Language:
English

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