Method for preparing a thin film amorphous silicon having high reliability

Patent · Tue Apr 10 00:00:00 EST 1984

OSTI ID:6420659

Noguchi, K

A semiconductor film is prepared by a method wherein a substrate is first disposed as one electrode within a reaction chamber. A supply of semiconductor material is fed into the reaction chamber as the other electrode while introducing a fluoride semiconductor material into said reaction chamber. A high frequency electric field is generated within the reaction chamber to ionize the semiconductor material and decompose the fluoride of the semiconductor material, whereby an amorphous semiconductor film is deposited on the substrate.

• Assignee: Nippon Electric Co., Ltd. (Japan)
• Patent Number(s): US 4441973
• OSTI ID: 6420659
• Resource Relation: Patent Priority Date: Priority date 30 Jul 1980, Japan; Other Information: PAT-APPL-287940
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
FABRICATION
THIN FILMS
AMORPHOUS STATE
ELECTRIC FIELDS
ELECTRODES
ELECTROLYSIS
ENERGY ABSORPTION
FLUORIDES
OPTICS
RELIABILITY
SEMICONDUCTOR MATERIALS
SUBSTRATES
THERMAL COMFORT
ABSORPTION
ELEMENTS
FILMS
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
LYSIS
MATERIALS
SEMIMETALS
360601* - Other Materials- Preparation & Manufacture