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Title: A novel and effective PECVD SiO[sub 2]/SiN antireflection coating for Si solar cells

Abstract

It is shown for the first time that sequential plasma-enhanced chemical vapor deposition (PECVD) of SiN and SiO[sub 2] can produce a very effective double-layer antireflection (AR) coating. This AR coating is compared with the frequency used and highly efficient MgG[sub 2]/ZnS double layer coating. It is shown that the SiO[sub 2]/SiN coating improves the short-circuit current (J[sub sc]) by 47%, open-circuit voltage (V[sub oc]) by 3.7%, and efficiency (Eff) by 55% for silicon cells with oxide surface passivation. The counterpart MgF[sub 2]/ZnS coating gives similar but slightly smaller improvements in V[sub oc] and Eff. However, if silicon cells do not have the oxide passivation, the PECVD SiO[sub 2]/SiN gives much greater improvement in the cell parameters, 57% in J[sub sc], 8% in V[sub oc], and 66% in efficiency, compared to the MgF[sub 2]/ZnS coating which improves J[sub sc] by 50%, V[sub oc] by 2%, and cell efficiency by 54%. This significant additional improvement results from the PECVD deposition-induced surface/defect passivation. The internal quantum efficiency (IQE) measurements showed that the PECVD SiO[sub 2]/SiN coating absorbs fair amount of photons in the short-wavelength range (<500 nm), however, the improved surface/defect passivation more than compensates for the loss in J[sub sc] andmore » gives higher improvement in the cell efficiency compared to the MgF[sub 2]/ZnS coating.« less

Authors:
; ; ;  [1]
  1. Georgia Inst. of Tech., Atlanta, GA (United States)
Publication Date:
OSTI Identifier:
6416525
Resource Type:
Journal Article
Journal Name:
IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)
Additional Journal Information:
Journal Volume: 40:6; Journal ID: ISSN 0018-9383
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; SILICON NITRIDES; CHEMICAL VAPOR DEPOSITION; SILICON OXIDES; SILICON SOLAR CELLS; ANTIREFLECTION COATINGS; COMPARATIVE EVALUATIONS; ELECTRICAL PROPERTIES; MAGNESIUM FLUORIDES; PASSIVATION; QUANTUM EFFICIENCY; ZINC SULFIDES; ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; CHEMICAL COATING; COATINGS; DEPOSITION; DIRECT ENERGY CONVERTERS; EFFICIENCY; EQUIPMENT; EVALUATION; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; INORGANIC PHOSPHORS; MAGNESIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOSPHORS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; PNICTIDES; SILICON COMPOUNDS; SOLAR CELLS; SOLAR EQUIPMENT; SULFIDES; SULFUR COMPOUNDS; SURFACE COATING; ZINC COMPOUNDS; 140501* - Solar Energy Conversion- Photovoltaic Conversion

Citation Formats

Chen, Zhizhang, Sana, P, Salami, J, and Rohatgi, A. A novel and effective PECVD SiO[sub 2]/SiN antireflection coating for Si solar cells. United States: N. p., 1993. Web. doi:10.1109/16.214744.
Chen, Zhizhang, Sana, P, Salami, J, & Rohatgi, A. A novel and effective PECVD SiO[sub 2]/SiN antireflection coating for Si solar cells. United States. doi:10.1109/16.214744.
Chen, Zhizhang, Sana, P, Salami, J, and Rohatgi, A. Tue . "A novel and effective PECVD SiO[sub 2]/SiN antireflection coating for Si solar cells". United States. doi:10.1109/16.214744.
@article{osti_6416525,
title = {A novel and effective PECVD SiO[sub 2]/SiN antireflection coating for Si solar cells},
author = {Chen, Zhizhang and Sana, P and Salami, J and Rohatgi, A},
abstractNote = {It is shown for the first time that sequential plasma-enhanced chemical vapor deposition (PECVD) of SiN and SiO[sub 2] can produce a very effective double-layer antireflection (AR) coating. This AR coating is compared with the frequency used and highly efficient MgG[sub 2]/ZnS double layer coating. It is shown that the SiO[sub 2]/SiN coating improves the short-circuit current (J[sub sc]) by 47%, open-circuit voltage (V[sub oc]) by 3.7%, and efficiency (Eff) by 55% for silicon cells with oxide surface passivation. The counterpart MgF[sub 2]/ZnS coating gives similar but slightly smaller improvements in V[sub oc] and Eff. However, if silicon cells do not have the oxide passivation, the PECVD SiO[sub 2]/SiN gives much greater improvement in the cell parameters, 57% in J[sub sc], 8% in V[sub oc], and 66% in efficiency, compared to the MgF[sub 2]/ZnS coating which improves J[sub sc] by 50%, V[sub oc] by 2%, and cell efficiency by 54%. This significant additional improvement results from the PECVD deposition-induced surface/defect passivation. The internal quantum efficiency (IQE) measurements showed that the PECVD SiO[sub 2]/SiN coating absorbs fair amount of photons in the short-wavelength range (<500 nm), however, the improved surface/defect passivation more than compensates for the loss in J[sub sc] and gives higher improvement in the cell efficiency compared to the MgF[sub 2]/ZnS coating.},
doi = {10.1109/16.214744},
journal = {IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)},
issn = {0018-9383},
number = ,
volume = 40:6,
place = {United States},
year = {1993},
month = {6}
}