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Title: Amorphous-silicon solar cells. Annual report, July 1, 1976--June 30, 1977

Technical Report ·
OSTI ID:6411146

Amorphous-silicon solar cells have been fabricated with conversion efficiencies as high as 6% in AM1 sunlight. The best values of the open-circuit voltage, short-circuit current density and fill factor are 895 mV, 14.5 mA/cm/sup 2/, and 0.674, respectively. Pd-Schottky-barrier cells have shown no degradation in conversion efficiency after 9700 h of constant illumination of approx. 50 to 75 mW/cm/sup 2/, and p-i-n cells have remained stable after more than 23 months on the shelf. Discharge-produced a-Si used in efficient solar cells contains approx. 10 to 30 at. % of bonded hydrogen. Infrared absorption and photoluminescence measurements indicate that the films with the lowest defect densities are deposited at substrate temperatures in the range of 300 to 350/sup 0/C. Hydrogen out-diffusion at higher temperatures apparently creates defect stages such as dangling bonds. Photoconductivity measurements and light-pulse experiments indicate electron and hole lifetimes of approx. 1 to 40 ..mu..s. Light-pulse experiments yield electron drift mobilities of approx. 2-5 x 10/sup -2/ cm/sup 2//V-s and hole drift mobilities of approx. 6 x 10/sup -4/ cm/sup 2//V-s. Both techniques find an electron trap approx. 0.20 to 0.25 eV below the conduction band and a hole trap approx. 0.35 to 0.40 eV above the valence band.

Research Organization:
RCA Labs., Princeton, NJ (USA)
DOE Contract Number:
EY-76-C-03-1286
OSTI ID:
6411146
Report Number(s):
SAN-1286-4
Country of Publication:
United States
Language:
English