skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Formation of thin Cu/sub 2/S (chalcocite) films using reactive sputtering techniques

Journal Article · · J. Vac. Sci. Technol.; (United States)
DOI:https://doi.org/10.1116/1.569910· OSTI ID:6411111

Thin Cu/sub 2/S (chalcocite) films, which are of interest for solar cell fabrication, have been prepared using reactive sputtering techniques. The copper--sulfur system, which is multiphasic an polymorphic, is difficult to form in the orthorhombic chalcocite phase. This phase can be achieved by careful control of substrate temperature and the partial pressure of H/sub 2/S in the sputtering atmosphere. Sulfur-rich atmospheres produce the sulfur-rich Cu/sub x/S phases which are unsuitable for solar cell fabrication, whereas sulfur-lean atmospheres result in precipitated copper cones on the surface. Epitaxial chalcocite films have been formed on single-crystal CdS substrates. Charge transport studies in polycrystalline Cu/sub x/S films formed on polycrystalline CdS indicate minority carrier diffusion lengths of 100 nm which are adequate for solar cell operation. The sputtering parameters affecting film formation (H/sub 2/S concentration, substrate temperature and bias, and substrate material) have been studied and are discussed.

Research Organization:
Lawrence Livermore Laboratory, Livermore, California 94550
OSTI ID:
6411111
Journal Information:
J. Vac. Sci. Technol.; (United States), Vol. 16:2
Country of Publication:
United States
Language:
English